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2SJ516
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π−MOSV)
2SJ516
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Unit: mm
z Low drain-source ON resistance : RDS (ON) = 0.6 (typ.)
z High forward transfer admittance : |Yfs| = 5.3 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 250 V)
z Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalenche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
250
250
±20
6.5
13
35
157
6.5
3.5
150
55 to 150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (chc)
Rth (cha)
3.57 °C / W
62.5 °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 6.3 mH, RG = 25 , IAR = 6.5 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
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Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cutoff current
Drainsource
breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
IDSS
VGS = ±16 V, VDS = 0 V
VDS = 250 V, VGS = 0 V
V (BR) DSS ID = 10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 3 A
VDS = 10 V, ID = 3 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
2SJ516
Min
250
1.5
2.5
Typ.
0.6
5.3
1120
110
320
Max
±10
100
3.5
0.8
Unit
μA
μA
V
V
S
pF
— 17 —
Switching time
Turnon time
Fall time
ton
tf
— 34 —
ns
—6—
Turnoff time
toff
Total gate charge (Gatesource
plus gatedrain)
Qg
Gatesource charge
Qgs VDD ≈ −200 V, VGS = 10 V, ID = 6.5 A
Gatedrain (“miller”) charge
Qgd
— 71 —
— 29 —
— 19 — nC
— 10 —
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 6.5 A, VGS = 0 V
IDR = 6.5 A, VGS = 0 V
dIDR / dt = 100 A / μs
Min Typ. Max Unit
— — 6.5 A
— — 13 A
— — 2.0 V
— 190 —
ns
— 2.1 — μC
Marking
J516
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No. (or abbreviation code)
Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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2SJ516
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