K2872-01MR.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 K2872-01MR 데이타시트 다운로드

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2SK2872-01MR
FAP-IIS Series
> Features
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Repetitive Avalanche Rated
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
N-channel MOS-FET
450V w1w,2w.DataSh±ee8tA4U.com30W
> Outline Drawing
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Repetitive or Non-Repetitive (Tch 150°C)
Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
V DS
ID
I D(puls)
V GS
I AR
E AS
PD
T ch
T stg
450
±8
±32
±35
8
164.1
30
150
-55 ~ +150
L=4.70mH,Vcc=45V
> Equivalent Circuit
Unit
V
A
A
V
A
mJ
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
BV DSS
ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=450V
VGS=0V
Tch=25°C
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±35V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=4A
VGS=10V
Forward Transconductance
g fs ID=4A VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=300V
t r ID=8A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
Avalanche Capability
t f RGS=10
I AV L = 4,70mH Tch=25°C
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
Reverse Recovery Time
t rr IF=IDR VGS=0V
Reverse Recovery Charge
Q rr -dIF/dt=100A/µs Tch=25°C
Min.
450
3,5
2
8
Typ. Max.
4,0 4,5
10 500
0,2 1,0
10 100
1,0 1,2
4
540 810
100 150
45 70
13 20
40 60
45 70
25 40
1,1 1,65
450
3,7
Unit
V
V
µA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-c)
R th(ch-a)
Test conditions
channel to case
channel to air
Min. Typ. Max. Unit
4,17 °C/W
62,5 °C/W

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N-channel MOS-FET
450V 1,2Ω ±8A 30W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
2SK2872-01MR
FAP-IIS Series
www.DataSheet4U.com
Drain-Source-On-State Resistance vs. Tch
RDS(on) = f(Tch): ID=4A; VGS=10V
Typical Transfer Characteristics
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
1
2
3
VDS [V]
Typical Drain-Source-On-State-Resistance vs. ID
RDS(on)=f(ID); 80µs pulse test;TC=25°C
Tch [°C]
Typical Forward Transconductance vs. ID
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
VGS [V]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch); ID=1mA; VDS=VGS
4
5
6
ID [A]
Typical Capacitances vs. VDS
C=f(VDS); VGS=0V; f=1MHz
7
ID [A]
Typical Gate Charge Characteristic
VGS=f(Qg): ID=8A; Tc=25°C
Tch [°C]
Forward Characteristics of Reverse Diode
IF=f(VSD); 80µs pulse test; VGS=0V
8
↑↑
9
VDS [V]
Avalanche Energy Derating
Eas=f(starting Tch): Vcc=45V; IAV=8A
10
Qg [nC]
Safe operation area
ID=f(VDS): D=0,01, Tc=25°C
12
VSD [V]
Transient Thermal impedance
Zthch=f(t) parameter:D=t/T
Starting Tch [°C]
VDS [V]
This specification is subject to change without notice!
t [s]

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N-channel MOS-FET
450V 1,2Ω ±8A 30W
> Characteristics
2SK2872-01MR
FAP-IIS Series
www.DataSheet4U.com
Power Dissipation
PD=f(TC)
125
100
75
50
25
0
0000000
TC [°C]
This specification is subject to change without notice!