0405SC-2200M.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 0405SC-2200M 데이타시트 다운로드

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0405SC-2200M Rev A1
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0405SC-2200M
2200Watts, 125 Volts, Class AB
406 to 450 MHz
Silicon Carbide SIT
PRELIMINARY SPECIFICATION
GENERAL DESCRIPTION
The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE
Class AB SILICON CARBIDE (SiC) STATIC INDUCTION
TRANSISTOR (SIT) capable of providing 2200 Watts of RF Peak power from
406 to 450 MHz. The transistor is designed for use in High Power Amplifiers
supporting applications such as UHF Weather Radar and Long Range Tracking
Radar. The device is an addition to the series of High Power Silicon
Carbide Transistors from Microsemi RF IS.
CASE OUTLINE
55TW-FET
(Common Gate)
ABSOLUTE MAXIMUM RATINGS
Voltage and Current
Drain-Source (VDSS)
Gate-Source (VGS)
Temperatures
Storage Temperature
Operating Junction Temperature
250V
-1V
-65 to +150°C
+250°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
Idss
Igss
θJC1
CHARACTERISTICS
Drain-Source Leakage Current
Gate-Source Leakage Current
Thermal Resistance
TEST CONDITIONS
VGS = -20V, VDG= 125V
VGS = -20V, VDS = 0V
MIN
TYP
MAX
750
50
0.15
UNITS
µA
µA
ºC/W
FUNCTIONAL CHARACTERISTICS @ 25°C, Vdd = 125V, Idq(ave) = 120 mA, Freq = 406, 425, 450 MHz,
GPG
Pin
ηd
ψ
Po +1dB
Common Gate Power Gain
Input Power
Drain Efficiency
Load Mismatch
Power Output – Higher Drive
Pout = 2200 W, Pulsed
Pulse Width = 300us, DF = 6%
F = 450 MHz, Pout =2200W
F = 420 MHz, Pout = 2200W
F = 450 MHz, Pin = 490 W
7.0 7.5
390 440
50 55
10:1
2450
dB
W
%
W
Vgs Gate source Voltage
Set for Idq(ave) = 120mA
3.0
10.0 Volts
Rev A1
May 2010
Microsemi RFIS Inc. reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi..com or contact our factory direct.

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0405SC-2200M Rev A1
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0405SC-2200M
Typical RF Performance Curve
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
0405SC-2200M: Pin vs Pout / Gain
450MHz, 300us 6%, 125V
9
8
7
6
5
4
3
2
50 100 150 200 250 300 350 400
Pin (W)
0405SC-2200M: Pout vs Drain Eff
450MHz, 300us 6%, 125V
70%
60%
50%
40%
30%
20%
10%
0%
0
250 500 750 1000 1250 1500 1750 2000 2250 2500
Pout (W)
Pout
Gain
Drain Ef f
Microsemi RFIS Inc. reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi..com or contact our factory direct.

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0405SC-2200M Rev A1
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0405SC-2200M
Test Circuit board
Part
C1, C8, C9,
C20
C2
C3
C4
C5
C6, C7
C10
C11
C12, C13,
C14
C15
C16, C17
C18
C19
0405SC-2200M Test Circuit Component Designations and Values
Description
Part Description
330pF Chip Capacitor (ATC 100B) L2, L3
7 Turns, 18AWG, IDIA 0.2”
3.9pF Chip Capacitor (ATC 100B)
12pF Chip Capacitor (ATC 100B)
6.8pF Chip Capacitor (ATC 100B)
2.2pF Chip Capacitor (ATC 100B)
33pF Chip Capacitor (ATC 100B)
1000uF 160V Electrolytic Capacitor
1uf Chip Capacitor
24pF Chip Capacitor (ATC 100B)
L1, L4
Z1
Z2
Z3
Z4
Z5
Z6
Ferrite Coil Inductor
65 x 890 mils (W x L)
65 x 720 mils (W x L)
865 x 450 mils (W x L)
1125 x 500 mils (W x L)
1200 x 500 mils (W x L)
290 x 105 mils (W x L)
15pF Chip Capacitor (ATC 100B)
22pF Chip Capacitor (ATC 100B)
10pF Chip Capacitor (ATC 100B)
8.2pF Chip Capacitor (ATC 100B)
Z7
Z8
Z9
290 x 835 mils (W x L)
65 x 687 mils (W x L)
65 x 420mils (W x L)
PCB
Rogers 4350, εr=3.48, 30mils, 1oz
Note:
All Z length dimensions include bends
Microsemi RFIS Inc. reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi..com or contact our factory direct.

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0405SC-2200M Rev A1
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0405SC-2200M
Impedance Information
Input
Matching
Network
ZS
Output
Matching
Network
ZL
Typical Impedance Values
Frequency (MHz)
406
425
450
ZS()
0.86 – j1.97
0.93 – j1.76
1.05 – j1.51
ZL()
0.75 – j0.49
0.87 – j0.25
1.11 + j0.04
* VDD = 125V, IDQ = 120mA avg, Pout = 2200W
* Pulse Format: 300µs, 6% Long Term Duty Factor
.
Microsemi RFIS Inc. reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi..com or contact our factory direct.

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0405SC-2200M Rev A1
www.DataSheet4U.com
0405SC-2200M
Case Outline 55TW FET
Microsemi RFIS Inc. reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi..com or contact our factory direct.