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NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N02M0818L2Awww.DataSheet4U.com
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
256Kx8 bit
Overview
Features
The N02M0818L2A is an integrated memory
device intended for implanted life-support (Class 3)
medical applications. This device comprises a 2
Mbit Static Random Access Memory organized as
262,144 words by 8 bits. The device is designed
and fabricated using NanoAmp’s advanced CMOS
technology with reliability inhancements for
medical users. The base design is the same as
NanoAmp’s N02M0818L1A, which is intended for
non life-support (Class 1 and 2) medical
applications. The device operates with two chip
enable (CE1 and CE2) controls and output enable
(OE) to allow for easy memory expansion. The
N02M0818L2A is optimal for various applications
where low-power is critical such as implanted
pacemaker devices. The device can operate over a
very wide temperature range of -20oC to +60oC
and is available in die form as well as in JEDEC
standard packages compatible with other standard
256Kb x 8 SRAMs
Product Family
• Single Wide Power Supply Range
1.3 to 2.3 Volts
• Very low standby current
200nA typical at 2.1V and 37 deg C
• Very low operating current
1 mA at 2.0V and 1µs (Typical)
• Very low Page Mode operating current
0.5mA at 1.0V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.0V
• Automatic power down to standby mode
• TTL compatible three-state output driver
Part Number
Package Type
Operating
Power
Temperature Supply (Vcc)
Speed
N02M0818L2AN 32 - STSOP I
N02M0818L2AD Known Good Die -20oC to +60oC
1.3V - 2.3V
100ns @ 1.65V
500ns @ 1.3V
Standby
Current
(ISB)
450nA @
2.3V
Operating
Current (Icc),
Max
2.5 mA @ 1MHz
Pin Configuration
Pin Descriptions
A11 1
A9 2
A8 3
A13 4
WE 5
CE2 6
A15 7
Vcc 8
A17 9
A16 10
A14 11
A12 12
A7 13
A6 14
A5 15
A4 16
N02M0818L2A
STSOP
32 OE
31 A10
30 CE1
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 Vss
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
Pin Name
A0-A17
WE
CE1, CE2
OE
I/O0-I/O7
VCC
VSS
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Data Inputs/Outputs
Power
Ground
(DOC#14-02-036 Rev C ECN#01-0887)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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N02M0818L2Awww.DataSheet4U.com
Functional Block Diagram
Address
Inputs
A0 - A3
Word
Address
Decode
Logic
Address
Inputs
A4 - A17
Page
Address
Decode
Logic
VCCQ(opt)
16K Page
x 16 word
x 8 bit
RAM
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
CE1
CE2
WE
OE
Control
Logic
Functional Description
CE1 CE2 WE
OE
I/O0 - I/O7
MODE
POWER
HXXX
XLXX
L H L X2
High Z
High Z
Data In
Standby1
Standby1
Write2
Standby
Standby
Active
L HH L
L HHH
Data Out
High Z
Read
Active
Active
Active
1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated
from any external influence and disabled from exerting any influence externally.
2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
I/O Capacitance
CIN VIN = 0V, f = 1 MHz, TA = 25oC
CI/O VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
Min Max Unit
8 pF
8 pF
(DOC#14-02-036 Rev C ECN#01-0887)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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N02M0818L2Awww.DataSheet4U.com
Absolute Maximum Ratings1
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
VIN,OUT
VCC
PD
TSTG
TA
TSOLDER
–0.3 to VCC+0.3
–0.3 to 3.0
500
–40 to 125
-20 to +60
240oC, 10sec(Lead only)
V
V
mW
oC
oC
oC
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Recommended Operating Limits (Not all inclusive values tested)1
Item
Symbol
Test Conditions
Min.
Max Unit
Core Supply Voltage
Data Retention Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Read/Write Operating Supply Current
@ 1 µs Cycle Time2
Read/Write Operating Supply Current
@ 85 ns Cycle Time2
VCC
VDR
VIH
VIL
VOH
VOL
ILI
ILO
ICC1
ICC2
Standby Current3
ISB1
Data Retention Current3
IDR
1.3 2.3 V
Chip Disabled (Note 3)
1.0
V
IOH = 0.2mA
IOL = -0.2mA
VIN = 0 to VCC
OE = VIH or Chip Disabled
VCC=2.3 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
VCC=2.3 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
VIN = VCC or 0V
Chip Disabled
tA= 37oC, VCC = 2.3 V
VCC = 1.0V, VIN = VCC or 0
Chip Disabled, tA= 85oC
0.7VCCQ VCCQ+0.5
–0.5 0.3VCCQ
VCCQ–0.3
0.3
0.1
0.1
2.5
13.0
450
1.0
V
V
V
V
µA
µA
mA
mA
nA
µA
1. These limits are the expected operating conditions for this device. Only selected points within this range of conditions
are specifically tested and guaranteed.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current
required to drive output capacitance expected in the actual system.
3. The chip is Disabled when CE1# is high or CE2 is low or UB# and LB# are high. The chip is Enabled when CE1# is
low and CE2 is high.
(DOC#14-02-036 Rev C ECN#01-0887)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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