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NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N04Q16yyC2B
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4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual
Vcc and VccQ for Ultimate Power Reduction
256K×16 bit POWER SAVER TECHNOLOGY
Overview
Features
The N04Q16yyC2B are ultra-low power memory
devices containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide ultra-low active and standby power. The
device operates with two chip enable (CE1 and
CE2) controls and output enable (OE) to allow for
easy memory expansion. Byte controls (UB and
LB) allow the upper and lower bytes to be
accessed independently. The 4Mb SRAM is
optimized for the ultimate in low power and is
suited for various applications where ultra-low-
power is critical such as medical applications,
battery backup and power sensitive hand-held
devices. The unique page mode operation saves
active operating power and the dual power supply
rails allow very low voltage operation while
maintaining 3V I/O capability. The device can
operate over a very wide temperature range of 0oC
to +70oC for the lowest power and is also available
in the industrial range of -40oC to +85oC. The
devices are available in standard BGA and TSOP
packages. The devices are also available as
Known Good Die (KGD) for embedded package
applications.
Product Options
• Multiple Power Supply Ranges
1.1V - 1.3V
1.65V - 1.95V
2.3V - 2.7V
2.7V - 3.6V
• Dual Vcc / VccQ Power Supplies
1.2V Vcc with 3V VccQ
1.8V Vcc with 3V VccQ
2.5V Vcc with 3V VccQ
• Very low standby current
50nA typical for 1.2V operation
• Very low operating current
400µA typical for 1.2V operation at 1µs
• Very low Page Mode operating current
80µA typical for 1.2V operation at 1µs
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Automatic power down to standby mode
• BGA, TSOP and KGD options
• RoHS Compliant
Part Number
I/O
Typical
Standby
Current
Vcc
(V)
VccQ
(V)
Speed
Typical
Operating
(nS) Operating Current Temperature
N04Q1612C2Bx-15C
x16
50nA
1.2 1.2, 1.8, 3 150ns 0.4 mA @ 1MHz
N04Q1618C2Bx-15C
N04Q1618C2Bx-70C
x16
x16
50nA
200nA
150ns
1.8 1.8, 2.5, 3
70ns
0.4 mA @ 1MHz
0.6 mA @ 1MHz 0oC to +70oC
N04Q1625C2Bx-15C
x16
800nA 2.5 2.5, 3 150ns 0.6 mA @ 1MHz
N04Q1630C2Bx-70C
x16
800nA
3.0
3.0
70ns 2.2mA @ 1MHz
Stock No. 23451-B 2/06
The specification is ADVANCE INFORMATION and subject to change without notice.
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NanoAmp Solutions, Inc.
Pin Configurations (4Mb)
A4
A3
A2
A1
A0
CE1
I/O0
I/O1
I/O2
I/O3
VCCQ
VSSQ
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
1 PIN
2 ONE
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
TSOP II
A5
A6
A7
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
VSS
VCC
I/O11
I/O10
I/O9
I/O8
CE2
A8
A9
A10
A11
A17
N04Q16yyC2B
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123456
A LB OE A0 A1 A2 CE2
B I/O8 UB A3 A4 CE1 I/O0
C I/O9 I/O10 A5 A6 I/O1 I/O2
D VSSQ I/O11 A17 A7 I/O3 VCC
E VCCQ I/O12 NC A16 I/O4 VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 NC A12 A13 WE I/O7
H NC A8 A9 A10 A11 NC
48 Pin BGA (top)
Pin Descriptions
Pin Name
A0-A17
WE
CE1
CE2
OE
LB
UB
I/O0-I/O7
I/O8-I/O15
VCC
VCCQ
VSS
VSSQ
NC
Pin Function
Address Inputs
Write Enable Input
Chip Enable 1 Input
Chip Enable 2 Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Lower Byte Data Input/Output
Upper Byte Data Input/Output
Core Power
Power for I/O
Core Ground
Ground for I/O
Not Connected
Stock No. 23451-B 2/06
The specification is ADVANCE INFORMATION and subject to change without notice.
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NanoAmp Solutions, Inc.
Functional Block Diagram
Address
Inputs
(A1 - A4)
Word
Address
Decode
Logic
N04Q16yyC2B
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Address
Inputs
(A0, A5 - A17)
Page
Address
Decode
Logic
CE1
CE2
WE
OE
UB
LB
Control
Logic
4Mb
RAM Array
Input/
Output
Mux
I/O0 - I/O7
and
Buffers
I/O8 - I/O15
Functional Description
CE1 CE2 WE OE UB1 LB1
I/O0 - I/O151
MODE
POWER
HXXXXX
High Z
Standby2
Standby
XLXXXX
L HX XHH
High Z
High Z
Standby2
Standby
Standby
Standby
L H L X3 L1 L1
L H H L L1 L1
L H H H L1 L1
Data In
Data Out
High Z
Write3
Read
Active
Active
Active
Active
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
I/O Capacitance
CIN VIN = 0V, f = 1 MHz, TA = 25oC
CI/O VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
Min Max Unit
8 pF
8 pF
Stock No. 23451-B 2/06
The specification is ADVANCE INFORMATION and subject to change without notice.
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N04Q16yyC2B
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Absolute Maximum Ratings1
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
VIN,OUT
VCC
PD
TSTG
TA
TSOLDER
–0.3 to VCC+0.3
–0.3 to 4
500
–40 to 125
-40 to +85
260oC, 10sec
V
V
mW
oC
oC
oC
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item
Core Supply Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Symbol
VCC
VCCQ
Device
N04Q1612...
N04Q1618...
N04Q1625...
N04Q1630...
N04Q1612...
N04Q1618...
N04Q1625...
N04Q1630...
VIH
VIL
VOH
VOL
ILI
ILO
Conditions
1.2V Core Device
1.8V Core Device
2.5V Core Device
3V Core Device
1.2V Core Device
1.8V Core Device
2.5V Core Device
3V Core Device
Min.
1.1
1.65
2.3
2.7
1.1
1.65
2.3
2.7
0.8 x
VCCQ
–0.3
IOH = -100uA
IOL = 100uA
VIN = 0 to VCC
OE = VIH or Chip
Disabled
VCC–0.2
Typ
1.2
1.8
2.5
3.0
Max
1.3
1.95
2.8
3.6
3.3
3.3
3.3
3.6
Unit
V
V
VCC+0.3 V
0.2 x
VCCQ
0.2
0.5
V
V
µA
0.5 µA
Stock No. 23451-B 2/06
The specification is ADVANCE INFORMATION and subject to change without notice.
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N04Q16yyC2B
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Power Consumption (TA = 0oC - 70oC)
Device PN
N04Q1612C2Bx-
15C
Standby Current2
Read/Write Current3
Isb
Icc
Page Mode Current Iccp
Chip Disabled
VCC = 1.3V, VIN = VCC or 0
Chip Enabled, IOUT = 0
VCC=1.3V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
VCC=1.3V, VIN=VIH or VIL
Speed
1us
150ns
1us
150ns
Typ1
50
0.4
2
80
300
Max
500
0.5
3
100
450
nA
mA
µA
Standby Current
Isb
Chip Disabled
VCC = 1.9V, VIN = VCC or 0V
50 500 nA
N04Q1618C2Bx-
15C
Read/Write Current
Icc
Chip Enabled, IOUT = 0
VCC=1.9V, VIN=VIH or VIL
1us
150ns
0.4
2
0.5
3
mA
Page Mode Current Iccp
Chip Enabled, IOUT = 0
VCC=1.9V, VIN=VIH or VIL
1us
150ns
80
400
100
500
µA
Standby Current
Isb
Chip Disabled
VCC = 1.9V, VIN = VCC or 0
0.2 1.5 µA
N04Q1618C2Bx-
70C
Read/Write Current
Icc
Chip Enabled, IOUT = 0
VCC=1.9V, VIN=VIH or VIL
1us
70ns
0.6
6
0.9
7
mA
Page Mode Current Iccp
Chip Enabled, IOUT = 0
VCC=1.9V, VIN=VIH or VIL
1us
70ns
0.1
0.8
0.2
1
mA
Standby Current
Isb
Chip Disabled
VCC = 2.8V, VIN = VCC or 0
0.8 1.0
µA
N04Q1625C2Bx-
15C
Read/Write Current
Icc
Chip Enabled, IOUT = 0
VCC= 2.8V, VIN=VIH or VIL
1us
150ns
0.6
3
1.0
4
mA
Page Mode Current Iccp
Chip Enabled, IOUT = 0
VCC= 2.8V, VIN=VIH or VIL
1us
150ns
0.1
1.5
0.2
2
mA
Standby Current
Isb
Chip Disabled
VCC = 3.6V, VIN = VCC or 0
0.8 4
µA
N04Q1630C2Bx- Read/Write Current
70C
Icc
Chip Enabled, IOUT = 0
VCC= 3.6V, VIN=VIH or VIL
1us
70ns
2.2
8.5
3
10
mA
Page Mode Current Iccp
Chip Enabled, IOUT = 0
VCC= 3.6V, VIN=VIH or VIL
1us
70ns
0.5
2
0.6
1.5
mA
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested.
2. This device assumes a standby mode if the chip is disabled (CE1 high or CE2 low). In order to achieve low standby current all
inputs must be within 0.2 volts of either VCC or VSS. This applies to all ISB values.
3. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system. This applies to all Icc and Iccp values.
Stock No. 23451-B 2/06
The specification is ADVANCE INFORMATION and subject to change without notice.
5