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NanoAmp Solutions, Inc.
N08M163WL1A670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
www.DataSheet4U.com
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
512Kx16 bit
Overview
Features
The N08M163WL1A is an integrated memory
device intended for non life-support (Class 1 or
2) medical applications. This device is a 4
megabit memory organized as 524,288 words by
16 bits. The device is designed and fabricated
using NanoAmp’s advanced CMOS technology
with reliability inhancements for medical users. The
base design is the same as NanoAmp’s
N08M1618L2A, which has further reliability
processing for life-support (Class 3) medical
applications. The device operates with two chip
enable (CE1 and CE2) controls and output enable
(OE) to allow for easy memory expansion. Byte
controls (UB and LB) allow the upper and lower
bytes to be accessed independently and can also
be used to deselect the device. This device is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in a JEDEC standard BGA package
Product Family
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Very low standby current
4.0µA at 3.0V (Typical)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Very low Page Mode operating current
1.0mA at 3.0V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.8V
• Special processing for Soft Error Rate (SER)
reduction
• Automatic power down to standby mode
• Compact space saving BGA package avail-
able
Part Number Package Type
Operating
Power
Temperature Supply (Vcc)
Speed
Standby
Operating
Current (ISB), Current (Icc),
Max Max
N08M163WL1AB 48 - BGA
-40oC to +85oC
N08M163WL1AD Known Good Die
2.3V - 3.6V
70ns @ 2.7V
100ns @ 2.3V
20 µA
3 mA @ 1MHz
Pin Configurations
Pin Descriptions
123456
A LB OE A0
B I/O8 UB A3
C I/O9 I/O10 A5
A1 A2 CE2
A4 CE1 I/O0
A6 I/O1 I/O2
D VSS I/O11 A17 A7 I/O3 VCC
E VCC I/O12 NC A16 I/O4 VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 NC A12 A13 WE I/O7
H A18 A8
A9 A10 A11 NC
48 Pin BGA (top)
8 x 10 mm
Pin Name
A0-A18
WE
CE1, CE2
OE
LB
UB
I/O0-I/O15
VCC
VSS
NC
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Ground
Not Connected
Stock No. 23319-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc.
Functional Block Diagram
N08M163WL1Awww.DataSheet4U.com
Address
Inputs
A0 - A3
Word
Address
Decode
Logic
Address
Inputs
A4 - A18
Page
Address
Decode
Logic
CE1#
CE2
WE#
OE#
UB#
LB#
Control
Logic
Functional Description
32K Page
x 16 Word
x 16 bit
RAM Array
Wodr
Mux
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
I/O8 - I/O15
CE1 CE2 WE
OE
I/O0 - I/O7
MODE
POWER
HXXX
XLXX
L H L X2
High Z
High Z
Data In
Standby1
Standby1
Write2
Standby
Standby
Active
L HH L
L HHH
Data Out
High Z
Read
Active
Active
Active
1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated
from any external influence and disabled from exerting any influence externally.
2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
I/O Capacitance
CIN VIN = 0V, f = 1 MHz, TA = 25oC
CI/O VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
Min Max Unit
8 pF
8 pF
Stock No. 23319-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc.
N08M163WL1Awww.DataSheet4U.com
Absolute Maximum Ratings1
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
VIN,OUT
VCC
PD
TSTG
TA
TSOLDER
–0.3 to VCC+0.3
–0.3 to 4.5
500
–40 to 125
-40 to +85
240oC, 10sec(Lead only)
V
V
mW
oC
oC
oC
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item
Symbol
Test Conditions
Min.
Typ1
Max Unit
Supply Voltage
Data Retention Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Read/Write Operating Supply Current
@ 1 µs Cycle Time2
Read/Write Operating Supply Current
@ 70 ns Cycle Time2
Page Mode Operating Supply Current
@ 70 ns Cycle Time2 (Refer to Power
Savings with Page Mode Operation
diagram)
VCC
VDR
VIH
VIL
VOH
VOL
ILI
ILO
ICC1
ICC2
ICC3
Maximum Standby Current3
ISB1
Maximum Data Retention Current3
IDR
Chip Disabled3
IOH = 0.2mA
IOL = -0.2mA
VIN = 0 to VCC
OE = VIH or Chip Disabled
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
2.3
1.8
VCC-0.6
–0.3
VCC–0.2
1.5
10.0
3.6
VCC+0.3
0.6
0.2
0.5
0.5
V
V
V
V
V
V
µA
µA
2.0 mA
12.0 mA
VCC=2.3 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
4.0
mA
VIN = VCC or 0V
Chip Disabled
tA= 85oC, VCC = 2.3 V
VCC = 1.8V, VIN = VCC or 0
Chip Disabled, tA= 85oC
2.0 20.0 µA
10.0 µA
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
Stock No. 23319-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc.
N08M163WL1Awww.DataSheet4U.com
Power Savings with Page Mode Operation (WE = VIH)
Page Address (A4 - A18)
Word Address (A0 - A3)
CE1
CE2
OE
Word 1
Open page
Word 2
...
Word 16
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power
saving feature.
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open
and 8-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is
considerably lower than standard operating currents for low power SRAMs.
Stock No. 23319-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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Timing Test Conditions
Item
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
Operating Temperature
Timing
Item
Read Cycle Time
Address Access Time
Chip Enable to Valid Output
Output Enable to Valid Output
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Write Pulse Width
Address Setup Time
Write Recovery Time
Write to High-Z Output
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
Symbol
tRC
tAA
tCO
tOE
tLZ
tOLZ
tHZ
tOHZ
tOH
tWC
tCW
tAW
tWP
tAS
tWR
tWHZ
tDW
tDH
tOW
N08M163WL1Awww.DataSheet4U.com
0.1VCC to 0.9 VCC
5ns
0.5 VCC
CL = 30pF
-40 to +85 oC
2.3 - 3.6 V
Min.
Max.
100
100
100
35
15
10
0 30
0 30
15
100
70
70
50
0
0
30
50
0
10
2.7 - 3.6 V
Min.
Max.
70
70
70
35
10
5
0 20
0 20
10
70
50
50
40
0
0
20
40
0
5
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Stock No. 23319-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
5