TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)
Switching Regulator Applications
• Low drain-source ON-resistance
: RDS (ON) = 0.36 Ω (typ.)
• High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 600 V)
• Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Drain-gate voltage (RGS = 20 kΩ)
DC (Note 1)
Pulse (t = 1 ms)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Repetitive avalanche energy
Storage temperature range
-55 to 150
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 0.84 mH, RG = 25 Ω, IAR = 12 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.