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TK12A60Uwww.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS)
TK12A60U
Switching Regulator Applications
Low drain-source ON-resistance
: RDS (ON) = 0.36 (typ.)
High forward transfer admittance : Yfs= 7.0 S (typ.)
Low leakage current: IDSS = 100 μA (VDS = 600 V)
Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
(Note 3)
Repetitive avalanche energy
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
600
600
±30
12
24
35
69
12
3.5
150
-55 to 150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max
3.57
62.5
Unit
°C/W
°C/W
2
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 0.84 mH, RG = 25 Ω, IAR = 12 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
3
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Electrical Characteristics (Ta = 25°C)
TK12A60Uwww.DataSheet4U.com
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
tr
ton
VGS = ±30 V, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 6 A
VDS = 10 V, ID = 6 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
10 V
VGS
0V
50 Ω
ID = 6 A VOUT
RL =
50 Ω
⎯ ⎯ ±1
⎯ ⎯ 100
600
3.0 5.0
0.36 0.4
2.0 7.0
720
55
1700
30
60
tf VDD 300 V 8
toff Duty 1%, tw = 10 μs
75
μA
μA
V
V
Ω
S
pF
ns
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 12 A
Qgd
14
8.5 nC
5.5
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 12 A, VGS = 0 V
IDR = 12 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯ ⎯ 12 A
⎯ ⎯ 24 A
⎯ ⎯ -1.7 V
380
ns
5.3 ⎯ μC
Marking
K12A60U
Part No. (or abbreviation code)
Lot No.
Note 4
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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10
Common source
Tc = 25°C
8 Pulse test
6
ID – VDS
8
10
7.5
7
6.5
4
6
2 VGS = 5.5 V
0
01 23 4 5
Drainsource voltage VDS (V)
TK12A60Uwww.DataSheet4U.com
ID – VDS
20
10 8
Common source
Tc = 25°C
Pulse test
16
7.5
12
7
8
6.5
4
VGS = 6 V
0
0 10 20 30 40
Drainsource voltage VDS (V)
20
Common source
VDS = 20 V
Pulse test
16
ID – VGS
12
8 100
25
4 Ta = −55°C
0
0 2 4 6 8 10
Gatesource voltage VGS (V)
VDS – VGS
10
Common source
Tc = 25°C
Pulse test
8
6
ID = 12A
4
6
2
3
0
0 4 8 12 16 20
Gatesource voltage VGS (V)
100
Common source
VDS = 10 V
Pulse test
Yfs⎪ − ID
10 Tc = −55°C
100 25
1
0.1
0.1
1
10 100
Drain current ID (A)
10
Common source
Tc = 25°C
Pulse test
RDS (ON) ID
1
0.1
0.1
VGS = 10 V
15
1 10
Drain current ID (A)
100
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RDS (ON) – Tc
1.2 Common source
VGS = 10 V
1 Pulse test
0.8
12
0.6 6
0.4 ID = 3 A
0.2
0
80 40
0
40 80 120 160
Case temperature Tc (°C)
TK12A60Uwww.DataSheet4U.com
100 Common source
Tc = 25°C
Pulse test
IDR VDS
10
10
1
53
1 VGS = 0 V
0.1
0
0.3
0.6
0.9
1.2
Drainsource voltage VDS (V)
10000
C – VDS
1000
100
Ciss
Coss
10
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
Pulse test
1
0.1
1
Crss
10 100
Drainsource voltage VDS (V)
Vth Tc
5
4
3
2
Common source
1 VDS = 10 V
ID = 1 mA
Pulse test
0
80 40
0
40 80 120
Case temperature Tc (°C)
160
PD Tc
50
40
30
20
10
0
0 40 80 120 160
Case temperature Tc (°C)
500
400 VDS
300
200
100
Dynamic input/output
characteristics
Common source 20
ID = 12 A
Tc = 25°C
Pulse test
16
200
VDD = 100V
400
VGS
12
8
4
00
0 4 8 12 16 20
Total gate charge Qg (nC)
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TK12A60Uwww.DataSheet4U.com
rth – tw
10
1
0.1
0.01
Duty=0.5
0.2
0.1
0.05
0.02
0.01
Single pulse
0.001
10μ
100μ
PDM
t
T
Duty = t/T
Rth (ch-c) = 3.57°C/W
1m
10m
100m
1
10
Pulse width tw (s)
Safe operating area
100
ID max (Pulse) *
ID max (Continuous)
10
100 μs *
1 ms *
1 DC operation
Tc = 25°C
0.1
* Single nonrepetitive
0.01
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.001
0.1
1
10
VDSS max
100 1000
Drainsource voltage VDS (V)
EAS – Tch
100
80
60
40
20
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVEFORM
RG = 25 Ω
VDD = 90 V, L = 0.84 mH
ΕAS
=
1
2
L
I2
⎜⎜⎝⎛
BVDSS
BVDSS VDD
⎟⎟⎠⎞
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