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2SK1304
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
Can be driven from 5 V source
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
G
1
2
3
S
www.DataSheet4U.com
REJ03G0923-0200
(Previous: ADE-208-1262)
Rev.2.00
Sep 07, 2005
1. Gate
2. Drain
(Flange)
3. Source
Rev.2.00 Sep 07, 2005 page 1 of 6

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2SK1304
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Item
Symbol
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
Forward transfer admittance
Input capacitance
|yfs|
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
td(on)
tr
td(off)
tf
VDF
trr
Note: 3. Pulse test
Min
100
±20
1.0
22
Typ
0.025
0.03
35
3500
1400
340
25
170
730
300
1.2
300
Ratings
100
±20
40
160
40
100
150
–55 to +150
www.DataSheet4U.com
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
±10
250
2.0
0.03
0.04
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 80 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 20 A, VGS = 10 V *3
ID = 20 A, VGS = 4 V *3
ID = 20 A, VDS = 10 V *3
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 20 A, VGS = 10 V,
RL = 1.5
IF = 40 A, VGS = 0
IF = 40 A, VGS = 0,
diF/dt = 50 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6

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2SK1304
Main Characteristics
Power vs. Temperature Derating
120
80
40
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
100
10 V
80
5V
7V
Pulse Test
4V
60
3.5 V
40
3V
20
VGS = 2.5 V
0 4 8 12 16 20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.0
Pulse Test
1.6
50 A
1.2
0.8
20 A
0.4 ID = 10 A
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
www.DataSheet4U.com
Maximum Safe Operation Area
500
Operation in this Area
200
is Limited by RDS (on)
100
50
20
10
5
2
TDaC=OPp2eW5ra°=tCio1n0(mT1Csm=(11s02S05h°1µCo0st))µs
1.0
0.5
1
3
10 30 100 300 1,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
VDS = 10 V
Pulse Test
40
30
20
75°C
10 TC = 25°C
–25°C
0 12345
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
Pulse Test
0.2
0.1
0.05
0.02
VGS = 4 V
10 V
0.01
0.005
2
5 10 20
50 100 200
Drain Current ID (A)