IXTY1R6N100D2.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 IXTY1R6N100D2 데이타시트 다운로드

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Depletion Mode
MOSFET
N-Channel
Preliminary Technical Information
IXTY1R6N100D2
IXTA1R6N100D2
IXTP1R6N100D2
VDSX
ID(on)
=
>
RDS(on)
1000V
1.6A
10Ω
TO-252 (IXTY)
Symbol
VDSX
VGSX
VGSM
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
Continuous
Transient
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-252
TO-263
TO-220
Maximum Ratings
1000
V
±20 V
±30 V
100 W
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
300 °C
260 °C
1.13 / 10
Nm/lb.in.
0.35 g
2.50 g
3.00 g
G
S
D (Tab)
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSX
VGS = - 5V, ID = 250μA
VGS(off)
VDS = 25V, ID = 100μA
IGSX VGS = ±20V, VDS = 0V
IDSX(off)
VDS = VDSX, VGS= - 5V
RDS(on)
ID(on)
VGS = 0V, ID = 0.8A, Note 1
VGS = 0V, VDS = 50V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
1000
V
- 2.5
- 4.5 V
±100 nA
2 μA
25 μA
10 Ω
1.6 A
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Flammability Classification
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-Up Circuits
• Protection Circuits
Ramp Generators
• Current Regulators
• Active Loads
© 2009 IXYS CORPORATION, All Rights Reserved
www.DataSheet.in
DS100185A(12/09)

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IXTY1R6N100D2 IXTA1R6N100D2
IXTP1R6N100D2
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
Ciss
Coss
Crss
VDS = 30V, ID = 0.8A, Note 1
VGS = -10V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = ±5V, VDS = 500V, ID = 0.8A
RG = 5Ω (External)
Qg(on)
Qgs
Qgd
VGS = 5V, VDS = 500V, ID = 0.8A
RthJC
RthCS
TO-220
Characteristic Values
Min. Typ. Max.
0.65 1.10
S
645 pF
43 pF
11 pF
27 ns
65 ns
34 ns
41 ns
27.0
1.6
13.5
nC
nC
nC
1.25 °C/W
0.50 °C/W
Safe-Operating-Area Specification
Symbol
SOA
Test Conditions
VDS = 800V, ID = 75mA, TC = 75°C, Tp = 5s
Characteristic Values
Min. Typ. Max.
60 W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VSD IF = 1.6A, VGS = -10V, Note 1
trr
IRM
QRM
IF = 1.6A, -di/dt = 100A/μs
VR = 100V, VGS = -10V
Characteristic Values
Min. Typ. Max.
0.8 1.3 V
970
9.96
4.80
ns
A
μC
TO-252 AA (IXTY) Outline
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
Dim.
A
A1
A2
b
b1
b2
c
c1
D
D1
E
E1
e
e1
H
L
L1
L2
L3
Millimeter
Min. Max.
2.19 2.38
0.89 1.14
0 0.13
0.64 0.89
0.76 1.14
5.21 5.46
0.46 0.58
0.46 0.58
5.97 6.22
4.32 5.21
6.35 6.73
4.32 5.21
2.28 BSC
4.57 BSC
9.40 10.42
0.51 1.02
0.64 1.02
0.89 1.27
2.54 2.92
Inches
Min. Max.
0.086 0.094
0.035 0.045
0 0.005
0.025 0.035
0.030 0.045
0.205 0.215
0.018 0.023
0.018 0.023
0.235 0.245
0.170 0.205
0.250 0.265
0.170 0.205
0.090 BSC
0.180 BSC
0.370 0.410
0.020 0.040
0.025
0.035
0.100
0.040
0.050
0.115
TO-220 (IXTP) Outline
Note 1. Pulse test, t 300μs, duty cycle, d 2%.
TO-263 (IXTA) Outline
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
Millimeter
Min. Max.
4.06
0.51
1.14
4.83
0.99
1.40
0.40
1.14
0.74
1.40
8.64
8.00
9.65
8.89
9.65 10.41
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
Inches
Min. Max.
.160
.020
.045
.190
.039
.055
.016 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270
.100
.575
.090
.040
.050
0
.320
BSC
.625
.110
.055
.070
.005
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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IXTY1R6N100D2 IXTA1R6N100D2
IXTP1R6N100D2
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGS = 5V
1V
0V
-1V
- 2V
- 3V
2 4 6 8 10 12 14
VDS - Volts
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
4.0
VGS = 5V
3.5 2V
1V
3.0
0V
2.5
2.0
-1V
1.5
1.0
0.5
0.0
0
- 2V
- 3V
10 20 30 40 50 60 70 80
VDS - Volts
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
Fig. 3. Output Characteristics @ TJ = 125ºC
VGS = 5V
1V
0V
-1V
- 2V
- 3V
4 8 12 16 20 24 28 32
VDS - Volts
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
1E-07
1E-08
Fig. 4. Drain Current @ TJ = 25ºC
VGS = - 3.25V
- 3.50V
- 3.75V
- 4.00V
- 4.25V
- 4.50V
- 4.75V
1E-09
0
100 200 300 400 500 600 700 800 900 1000 1100 1200
VDS - Volts
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
Fig. 5. Drain Current @ TJ = 100ºC
VGS = - 3.50V
- 3.75V
- 4.00V
- 4.25V
- 4.50V
- 4.75V
1.E-07
0
100 200 300 400 500 600 700 800 900 1000 1100 1200
VDS - Volts
1.E+12
1.E+11
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
-4.8
Fig. 6. Dynamic Resistance vs. Gate Voltage
VDS = 700V - 100V
TJ = 25ºC
TJ = 100ºC
-4.6 -4.4 -4.2 -4.0 -3.8 -3.6 -3.4 -3.2
VGS - Volts
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Fig. 7. Normalized RDS(on) vs. Junction Temperature
2.6
VGS = 0V
2.2 I D = 0.8A
1.8
1.4
1.0
0.6
0.2
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
IXTY1R6N100D2 IXTA1R6N100D2
IXTP1R6N100D2
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.0
Fig. 8. RDS(on) Normalized to ID = 0.8A Value
vs. Drain Current
VGS = 0V
5V - - - -
TJ = 125ºC
TJ = 25ºC
0.5 1.0 1.5 2.0 2.5 3.0
ID - Amperes
2.5
VDS= 30V
2.0
Fig. 9. Input Admittance
1.5
1.0
TJ = 125ºC
25ºC
- 40ºC
0.5
0.0
-4.0
1.3
-3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5
VGS - Volts
Fig. 11. Breakdown and Threshold Voltages
vs. Junction Temperature
0.0
1.2
VGS(off) @ VDS = 25V
1.1
BVDSX @ VGS = - 5V
1.0
0.9
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
VDS= 30V
0.5
Fig. 10. Transconductance
TJ = - 40ºC
25ºC
125ºC
1 1.5
ID - Amperes
2
Fig. 12. Forward Voltage Drop of
Intrinsic Diode
5
VGS= -10V
4
2.5
3
2
TJ = 125ºC
1 TJ = 25ºC
0.8
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9
VSD - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
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IXTY1R6N100D2 IXTA1R6N100D2
IXTP1R6N100D2
10,000
f = 1 MHz
1,000
Fig. 13. Capacitance
Ciss
100 Coss
10
1
0
Crss
5 10 15 20 25 30 35 40
VDS - Volts
5
4 VDS = 500V
3
I D = 0.8A
I G = 1mA
2
1
0
-1
-2
-3
-4
-5
05
Fig. 14. Gate Charge
10 15
QG - NanoCoulombs
20
25
Fig. 15. Forward-Bias Safe Operating Area
10.00
@ TC = 25ºC
Fig. 16. Forward-Bias Safe Operating Area
10.00
@ TC = 75ºC
1.00
RDS(on) Limit
0.10
TJ = 150ºC
TC = 25ºC
Single Pulse
100..001010
100
VDS - Volts
100µs
1ms
1.00
RDS(on) Limit
10ms
100ms
DC
0.10
TJ = 150ºC
TC = 75ºC
Single Pulse
Fig. 17. Maximum Transient Thermal Impedance
0.01
1,000
10
100
VDS - Volts
25µs
100µs
1ms
10ms
100ms
DC
1,000
Fig. 17. Maximum Transient Thermal Impedance
2.00
hvjv
1.00
0.10
0.01
0.00001
0.0001
0.001
© 2009 IXYS CORPORATION, All Rights Reserved
www.DataSheet.in
0.01
Pulse Width - Seconds
0.1
1 10
IXYS REF: T_1R6N100D2(2C)8-24-09