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FSBB30CH60C
Smart Power Module
February 2008
Motion-SPMTM
Features
• UL Certified No.E209204(SPM27-EC package)
• Very low thermal resistance due to using DBC
• Easy PCB layout due to built in bootstrap diode
• 600V-30A 3-phase IGBT inverter bridge including control ICs
for gate driving and protection
• Divided negative dc-link terminals for inverter current sensing
applications
• Single-grounded power supply due to built-in HVIC
• Isolation rating of 2500Vrms/min.
Applications
• AC 100V ~ 253V three-phase inverter drive for small power
ac motor drives
• Home appliances applications like air conditioner and wash-
ing machine
General Description
It is an advanced motion-smart power module (Motion-SPMTM)
that Fairchild has newly developed and designed to provide
very compact and high performance ac motor drives mainly tar-
geting low-power inverter-driven application like air conditioner
and washing machine. It combines optimized circuit protection
and drive matched to low-loss IGBTs. System reliability is fur-
ther enhanced by the integrated under-voltage lock-out and
short-circuit protection. The high speed built-in HVIC provides
opto-coupler-less single-supply IGBT gate driving capability that
further reduce the overall size of the inverter system design.
Each phase current of inverter can be monitored separately due
to the divided negative dc terminals.
Top View
44mm
Bottom View
26.8mm
Figure 1.
©2008 Fairchild Semiconductor Corporation
FSBB30CH60C Rev. D
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Integrated Power Functions
• 600V-30A IGBT inverter for three-phase DC/AC power conversion (Please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
• For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting
Control circuit under-voltage (UV) protection
Note) Available bootstrap circuit example is given in Figures 12 and 13.
• For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC)
Control supply circuit under-voltage (UV) protection
• Fault signaling: Corresponding to UV (Low-side supply) and SC faults
• Input interface: 3.3/5V CMOS/LSTTL compatible, Schmitt trigger input
Pin Configuration
Top View
FSBB30CH60C Rev. D
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Figure 2.
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Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
Pin Name
VCC(L)
COM
IN(UL)
IN(VL)
IN(WL)
VFO
CFOD
CSC
IN(UH)
VCC(H)
VB(U)
VS(U)
IN(VH)
VCC(H)
VB(V)
VS(V)
IN(WH)
VCC(H)
VB(W)
VS(W)
NU
NV
NW
U
V
W
P
Pin Description
Low-side Common Bias Voltage for IC and IGBTs Driving
Common Supply Ground
Signal Input for Low-side U Phase
Signal Input for Low-side V Phase
Signal Input for Low-side W Phase
Fault Output
Capacitor for Fault Output Duration Time Selection
Capacitor (Low-pass Filter) for Short-Current Detection Input
Signal Input for High-side U Phase
High-side Common Bias Voltage for IC and IGBTs Driving
High-side Bias Voltage for U Phase IGBT Driving
High-side Bias Voltage Ground for U Phase IGBT Driving
Signal Input for High-side V Phase
High-side Common Bias Voltage for IC and IGBTs Driving
High-side Bias Voltage for V Phase IGBT Driving
High-side Bias Voltage Ground for V Phase IGBT Driving
Signal Input for High-side W Phase
High-side Common Bias Voltage for IC and IGBTs Driving
High-side Bias Voltage for W Phase IGBT Driving
High-side Bias Voltage Ground for W Phase IGBT Driving
Negative DC–Link Input for U Phase
Negative DC–Link Input for V Phase
Negative DC–Link Input for W Phase
Output for U Phase
Output for V Phase
Output for W Phase
Positive DC–Link Input
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Internal Equivalent Circuit and Input/Output Pins
(19) VB(W)
(18) VCC(H)
(17) IN(WH)
(20) VS(W)
(15) VB(V)
(14) VCC(H)
(13) IN(VH)
(16) VS(V)
(11) VB(U)
(10) VCC(H)
(9) IN(UH)
(12) VS(U)
VB
VCC
COM
IN
OUT
VS
VB
VCC
COM
IN
OUT
VS
VB
VCC
COM
IN
OUT
VS
P (27)
W (26)
V (25)
U (24)
(8) CSC
(7) CFOD
(6) VFO
(5) IN(WL)
(4) IN(VL)
(3) IN(UL)
(2) COM
(1) VCC(L)
C(SC) OUT(WL)
C(FOD)
VFO
IN(WL) OUT(VL)
IN(VL)
IN(UL)
COM
VCC
OUT(UL)
VSL
NW (23)
NV (22)
NU (21)
Note:
1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT and one control IC. It has gate drive and protection functions.
2. Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals.
3. Inverter high-side is composed of three IGBTs, freewheeling diodes and three drive ICs for each IGBT.
Figure 3.
FSBB30CH60C Rev. D
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Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)
Inverter Part
Symbol
Parameter
Conditions
Rating
VPN
VPN(Surge)
VCES
± IC
± ICP
PC
TJ
Supply Voltage
Supply Voltage (Surge)
Collector-emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Collector Dissipation
Operating Junction Temperature
Applied between P- NU, NV, NW
Applied between P- NU, NV, NW
TC = 25°C
TC = 25°C, Under 1ms Pulse Width
TC = 25°C per One Chip
(Note 1)
Note:
1. The maximum junction temperature rating of the power chips integrated within the SPM is 150°C(@TC 125°C).
450
500
600
30
60
106
-40 ~ 150
Control Part
Symbol
Parameter
VCC Control Supply Voltage
VBS High-side Control Bias
Voltage
VIN Input Signal Voltage
VFO Fault Output Supply Voltage
IFO Fault Output Current
VSC Current Sensing Input Voltage
Conditions
Rating
Applied between VCC(H), VCC(L) - COM
20
Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
20
Applied between IN(UH), IN(VH), IN(WH),
IN(UL), IN(VL), IN(WL) - COM
-0.3~17
Applied between VFO - COM
-0.3~VCC+0.3
Sink Current at VFO Pin
5
Applied between CSC - COM
-0.3~VCC+0.3
Units
V
V
V
A
A
W
°C
Units
V
V
V
V
mA
V
Bootstrap Diode Part
Symbol
Parameter
VRRM
IF
IFP
TJ
Maximum Repetitive Reverse Voltage
Forward Current
Forward Current (Peak)
Operating Junction Temperature
Conditions
TC = 25°C
TC = 25°C, Under 1ms Pulse Width
Rating
600
0.5
2
-40 ~ 150
Units
V
A
A
°C
Total System
Symbol
Parameter
VPN(PROT) Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
TC
TSTG
VISO
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Conditions
VCC = VBS = 13.5 ~ 16.5V
TJ = 150°C, Non-repetitive, less than 2μs
-40°CTJ 150°C, See Figure 2
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to heat sink plate
Rating
400
-40 ~ 125
-40 ~ 150
2500
Units
V
°C
°C
Vrms
Thermal Resistance
Symbol
Parameter
Conditions
Rth(j-c)Q
Rth(j-c)F
Junction to Case Thermal
Resistance
Inverter IGBT part (per 1/6 module)
Inverter FWD part (per 1/6 module)
Note:
2. For the measurement point of case temperature(TC), please refer to Figure 2.
Min.
-
-
Typ.
-
-
Max.
1.17
1.87
Units
°C/W
°C/W
FSBB30CH60C Rev. D
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