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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD738www.DataSheet4U.com
DESCRIPTION
·DC Current Gain -
: hFE = 40(Min.)@ IC= -20mA
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -45V(Min.)
·Complement to Type BD737
APPLICATIONS
·Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
-45 V
wwwVCEO
Collector-Emitter Voltage
-45 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-4 A
ICM Collector Current-Peak
-7 A
IBB Base Current-Continuous
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
-1 A
2
W
40
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn

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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD738www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
-45 V
V(BR)CBO Collector-Base Breakdown Voltage
IC= -0.1mA; IE= 0
-45 V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
-5 V
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB=B -0.2A
-0.6 V
VBE(on) Base-Emitter On Voltage
IC= -2A; VCE= -1V
-1.1 V
ICES Collector Cutoff Current
i.cnhFE-1
DC Current Gain
www.iscsemhFE-2
DC Current Gain
VCE= -45V; VBE= 0
IC= -20mA; VCE= -4V
IC= -2A; VCE= -1V
-0.2 mA
40
40
isc Websitewww.iscsemi.cn
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