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HTT1129E
Silicon NPN Epitaxial Twin Transistor
REJ03G0840-0200
(Previous ADE-208-1541A)
Rev.2.00
Aug.10.2005
Features
Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm)
Q1: Equivalent Buffer transistor
2SC5849
2SC5872
Q2: Equivalent OSC transistor
Outline
RENESAS Package code: PXSF0006LA-A
(Package name: EMFPAK-6)
Pin Arrangement
6 54
B1 6 E2 5 B2 4
Q1 Q2
123
Note: Marking is “Z”.
C1 1 E1 2 C2 3
1. Collector Q1
2. Emitter Q1
3. Collector Q2
4. Base Q2
5. Emitter Q2
6. Base Q1
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HTT1129E
Absolute Maximum Ratings
Item
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
Note: *Value on PCB. (FR–4 (13 x 13 x 0.635 mm)).
Ratings
Q1 Q2
15 15
66
1.5 0.8
80 50
Total 200*
150 150
–55 to +150
–50 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Collector Power Dissipation Curve
250
*Value on PCB.
(FR–4 (13 x13 x 0.635 mm))
200 2 devices total
150
100
50
0 50 100 150 200
Ambient temperature Ta (°C)
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HTT1129E
Q1 Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test conditions
Collector to base breakdown voltage V(BR)CBO
15
V IC = 10 µA, IE = 0
Collector cutoff current
ICBO ⎯ ⎯ 0.1 µA VCB = 15 V, IE = 0
Collector cutoff current
ICEO ⎯ ⎯ 0.1 µA VCE = 6 V, RBE = infinite
Emitter cutoff current
IEBO ⎯ ⎯ 0.1 µA VEB = 1.5 V, IC = 0
DC current transfer ratio
hFE 90 120 140 VCE = 1 V, IC = 5 mA
Reverse transfer capacitance
Cre 0.50 0.65 pF VCB = 1 V, f = 1 MHz
Emitter ground
Gain bandwidth product
Forward transfer coefficient
Noise figure
fT
|S21|2
NF
2 4 GHz VCE = 1 V, IC = 5 mA, f = 1 GHz
7 11 dB VCE = 1 V, IC = 5 mA,
1.7 2.3 dB f = 900 MHz,
ΓS = ΓL = 50
Q2 Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test conditions
Collector to base breakdown voltage V(BR)CBO
16
V IC = 10 µA, IE = 0
Collector cutoff current
ICBO ⎯ ⎯ 0.1 µA VCB = 15 V, IE = 0
Collector cutoff current
ICEO ⎯ ⎯ 0.1 µA VCE = 6 V, RBE = infinite
Emitter cutoff current
IEBO ⎯ ⎯ 0.1 µA VEB = 0.8 V, IC = 0
DC current transfer ratio
hFE 90 120 140 VCE = 1 V, IC = 5 mA
Reverse transfer capacitance
Cre 0.25 0.35 pF VCB = 1 V, f = 1 MHz
Emitter ground
Gain bandwidth product
Forward transfer coefficient
Noise figure
fT
|S21|2
NF
8 10 GHz VCE = 1 V, IC = 5 mA, f = 1 GHz
13 16 dB VCE = 1 V, IC = 5 mA,
1.0 1.6 dB f = 900 MHz
ΓS = ΓL = 50
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HTT1129E
Q1 Main Characteristics
Typical Output Characteristics
20
180 µA
16
12
8
4
160 µA
140 µA
120 µA
100 µA
80 µA
60 µA
40 µA
IB = 20 µA
0 1 2 3 4 56
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
200
VCE = 1 V
100
0
0.1 1.0 10
Collector Current IC (mA)
100
Gain Bandwidth Product vs.
Collector Current
20
f = 1 GHz
16
VCE = 3 V
12
VCE = 2 V
8
4
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12
VCE = 1 V
5 10 20
50 100
Collector Current IC (mA)
Typical Forward Transfer Characteristics
25
VCE = 1 V
20
15
10
5
0 0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage VBE (V)
Reverse Transfer Capacitance vs.
Collector to Base Voltage
1.0
Emitter ground
f = 1 MHz
0.8
0.6
0.4
0.2
0 0.5 1.0 1.5 2.0
Collector to Base Voltage VCB (V)
Noise Figure vs. Collector Current
5
VCE = 1 V
f = 900 MHz
4
3
2
1
0
12
5 10 20
50 100
Collector Current IC (mA)
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HTT1129E
S21 Parameter vs. Collector Current
20
f = 1 GHz
16
VCE = 2 V
12 VCE = 1 V
8
4
0
12
5 10 20
50 100
Collector Current IC (mA)
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Rev.2.00 Aug 10, 2005 page 5 of 8