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Three Phase Half Controlled
Rectifier Bridge, B6HK
VVZ 110
VVZ 175
IdAVM = 110/167 A
VRRM = 1200-1600 V
VRSM
VDSM
V
1300
1500
1700
VRRM
VDRM
V
1200
1400
1600
Type
VVZ 110-12io7
VVZ 110-14io7
VVZ 175-12io7
VVZ 175-14io7
VVZ 175-16io7
E
D
C
A
2 31
B
Symbol
I
dAV
IFRMS, ITRMS
I ,I
FSM TSM
I2t
(di/dt)cr
(dv/dt)cr
VRGM
PGM
PGAVM
TVJ
TVJM
Tstg
VISOL
Md
Weight
Test Conditions
T
C
=
85°C;
module
per leg
T
VJ
=
45°C;
t = 10 ms (50 Hz), sine
VR = 0
t = 8.3 ms (60 Hz), sine
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 45°C t = 10 ms (50 Hz), sine
V =0
t = 8.3 ms (60 Hz), sine
R
TVJ = TVJM
V =0
R
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = TVJM repetitive, IT = 50 A
f =400 Hz, tP =200 ms
VD = 2/3 VDRM
IG = 0.3 A, non repetitive,
diG/dt = 0.3 A/ms, IT = 1/3 • IdAV
TVJ = TVJM; VDR = 2/3 VDRM
R
GK
=
¥;
method
1
(linear
voltage
rise)
TVJ = TVJM
IT = ITAVM
tp = 30 ms
tp = 500 ms
tp = 10 ms
50/60 Hz, RMS t = 1 min
IISOL £ 1 mA
t=1s
Mounting torque (M6)
Terminal connection torque (M6)
typ.
Maximum Ratings
VVZ 110 VVZ 175
110 167 A
58 89 A
1150
1230
1500
1600
A
A
1000
1070
1350
1450
A
A
6600
6280
11200
10750
A2s
A2s
5000
4750
9100
8830
A2s
A2s
150 A/ms
500
1000
10
£ 10
£5
£1
0.5
-40...+125
125
-40...+125
2500
3000
5±15 %
5±15 %
300
A/ms
V/ms
V
W
W
W
W
°C
°C
°C
V~
V~
Nm
Nm
g
D
C~
~
E
~
321
B
-
A
+
Features
q Package with screw terminals
q Isolation voltage 3000 V~
q Planar passivated chips
q UL registered E72873
Applications
q Input rectifier for PWM converter
q Input rectifier for switch mode power
supplies (SMPS)
q Softstart capacitor charging
Advantages
q Easy to mount with two screws
q Space and weight savings
q Improved temperature and power
cycling
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1-2

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VVZ 110
VVZ 175
Symbol
I ,I
RD
VF, VT
VT0
rT
V
GT
I
GT
VGD
IGD
IL
IH
t
gd
RthJC
RthJH
dS
d
A
a
Test Conditions
V =V ;V =V
R RRM D DRM
T =T
VJ VJM
TVJ = 25°C
IF, IT = 200 A, TVJ = 25°C
For power-loss calculations only
(TVJ = 125°C)
V = 6 V;
D
V = 6 V;
D
T
VJ
=
25°C
TVJ = -40°C
T
VJ
=
25°C
TVJ = -40°C
TVJ = TVJM;
TVJ = TVJM;
VD = 2/3 VDRM
VD = 2/3 VDRM
IG = 0.3 A; tG = 30 ms
diG/dt = 0.3 A/ms
TVJ = 25°C
TVJ = 25°C; VD = 6 V; RGK = ¥
T
VJ
=
25°C;
V
D
=
1/2
V
DRM
IG = 0.3 A; diG/dt = 0.3 A/ms
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
Characteristic Values
VVZ 110 VVZ 175
£5
£ 0.3
mA
mA
£ 1.75
1.57 V
0.85 0.85 V
6 3.5 mW
£ 1.5
£ 1.6
£ 100
£ 200
V
V
mA
mA
£ 0.2
£5
V
mA
£ 450
mA
£ 200
£2
mA
ms
0.65
0.108
0.8
0.133
0.46
0.077
0.55
0.092
10
9.4
50
K/W
K/W
K/W
K/W
mm
mm
m/s2
10
V
VG
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
3
1
26
5
1
4
IGD, TVJ = 125°C
0.1
1 10 100
4: PGAV = 0.5 W
5: PGM = 5 W
6: PGM = 10 W
1000
IG
mA
Fig. 1 Gate trigger characteristics
120
A
100
IdAV
VVZ 110
80
60
40
20
Dimensions in mm (1 mm = 0.0394")
M6x10
94
80
72
26 26
C~
D~
A+
3
2
1
B-
E~
4
5
6
12
25
66
900
A
800
IFSM
700
600
VVZ 110
TVJ = 45°C
500
400
TVJ = 125°C
300
200
50 Hz
80% VRRM
0
0 50 100 °C
TC
Fig. 2 DC output current at case
temperature
150
0.7
K/W
0.6
ZthJC
0.5
VVZ 110
0.4
0.3
0.2
0.1
100 0.0
10-3 10-2 10-1 100 s 101
10-3 10-2 10-1 100 s 101
tt
Fig. 3 Surge overload current
IFSM: Crest value, t: duration
Fig. 4 Transient thermal impedance
junction to case (per leg)
© 2000 IXYS All rights reserved
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