L102.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 L102 데이타시트 다운로드

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MDD 312
High Power
Diode Modules
IFRMS = 2x520 A
IFAVM = 2x310 A
VRRM = 1200-2200 V
VRSM
VDSM
V
1300
1500
1700
1900
2100
2300
VRRM
VDRM
V
1200
1400
1600
1800
2000
2200
Type
MDD 312-12N1
MDD 312-14N1
MDD 312-16N1
MDD 312-18N1
MDD 312-20N1
MDD 312-22N1
31
2
3
2
1
Symbol
IFRMS
IFAVM
IFSM
i2dt
TVJ
TVJM
Tstg
VISOL
Md
Weight
Conditions
TVJ = TVJM
TC = 100°C; 180° sine
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
50/60 Hz, RMS
IISOL 1 mA
t = 1 min
t=1s
Mounting torque (M6)
Terminal connection torque (M8)
Typical including screws
Maximum Ratings
520 A
310 A
10500
11200
A
A
9200
9800
A
A
551000
527000
A2s
A2s
423 000
403 000
A2s
A2s
-40...+150
150
-40...+125
°C
°C
°C
3000
3600
V~
V~
4.5-7/40-62 Nm/lb.in.
11-13/97-115 Nm/lb.in.
750 g
Features
• International standard package
• Direct copper bonded Al2O3-ceramic
with copper base plate
• Planar passivated chips
• Isolation voltage 3600 V~
• UL registered E 72873
Applications
• Supplies for DC power equipment
• DC supply for PWM inverter
• Field supply for DC motors
• Battery DC power supplies
Advantages
• Simple mounting
• Improved temperature and power cycling
• Reduced protection circuits
Symbol
Conditions
Characteristic Values
IRRM
VF
VT0
rT
RthJC
RthJK
TVJ = TVJM; VR = VRRM
IF = 600 A; TVJ = 25°C
For power-loss calculations only
TVJ = TVJM
per diode; DC current
per module
per diode; DC current
per module
30
1.32
0.8
0.6
0.12
0.06
0.16
0.08
mA
V
V
m
K/W
K/W
K/W
K/W
QS TVJ = 125°C; IF = 400 A; -di/dt = 50 A/µs
IRM
dS Creeping distance on surface
dA Creepage distance in air
a Maximum allowable acceleration
700 µC
260 A
12.7
9.6
50
mm
mm
m/s2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
Dimensions in mm (1 mm = 0.0394")
M8x20
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
1-3

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MDD 312
10000
IFSM
A
8000
6000
50 Hz
80 % VRRM
TVJ = 45°C
TVJ = 150°C
4000
2000
0
0.001
0.01
0.1 s 1
t
Fig. 1 Surge overload current
IFSM: Crest value, t: duration
600
Ptot
W
500
400
300
DC
180° sin
200 120°
60°
30°
100
106
I2t VR = 0 V
A2s
550
A
500
IFAVM
450
400
DC
180° sin
120°
60°
30°
350
TVJ = 45°C
TVJ = 150°C
300
250
200
150
100
50
105
1
ms 10
t
Fig. 2 I2t versus time (1-10 ms)
0
0 25 50 75 100 125 150
TC
Fig. 3 Maximum forward current
at case temperature
RthKA K/W
0.06
0.1
0.2
0.3
0.4
0.6
0.8
600
A
500
IRM
400
TVJ = 125°C
VR = 600 V
300
IF = 400 A
200
100
0
0 100 200 300 400 500 A 0
IFAVM
25 50 75 100 125 150
TA
Fig. 4 Power dissipation vs. forward current and ambient temperature (per diode)
1750
Ptot W
1500
1250
1000
750
500
RL
Circuit
B2U
2 x MDD312
RthKA K/W
0.04
0.06
0.08
0.12
0.2
0.3
0.5
250
0
0 50 100 1A50s 200
Fig. 5
25
diF/dt
Typ. peak reverse current
IRM versus -diF/dt
µs
20
trr
TVJ = 125°C
VR = 600 V
15
IF = 400 A
10
5
0
0 100 200 300 400 500 600 A 0
IdAVM
25 50 75 100 125 150
TA
Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current
and ambient temperature R = resistive load, L = inductive load
0
0 50 100 1A50s 200
diF/dt
Fig. 7 Typ. recovery time trr
versus -diF/dt
IXYS reserves the right to change limits, test conditions and dimensions.
2-3
© 2004 IXYS All rights reserved

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MDD 312
3000
W
2500
Ptot
2000
1500
1000
500
Circuit
B6U
3 x MDD312
RthKA K/W
0.03
0.06
0.1
0.15
0.2
0.3
0.4
0
0 200 400 600 800 A 0
IdAVM
25 50 75 100 125 150
TA
Fig. 8 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
0.20
K/W
0.15
ZthJC
0.10
0.05
30°
60°
120°
180°
DC
0.00
10-3
10-2
10-1
100
101
t
Fig. 9 Transient thermal impedance junction to case (per diode)
s
0.25
K/W
0.20
ZthJK
0.15
0.10 30°
60°
120°
180°
0.05 DC
0.00
10-3
10-2
10-1
100
101 s
t
Fig. 10Transient thermal impedance junction to heatsink (per diode)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
RthJC for various conduction angles d:
d
DC
180°C
120°C
60°C
30°C
RthJC (K/W)
0.120
0.128
0.135
0.153
0.185
Constants for ZthJC calculation:
i
1
2
3
4
102
Rthi (K/W)
0.0058
0.031
0.072
0.0112
ti (s)
0.00054
0.098
0.54
12
RthJK for various conduction angles d:
d
DC
180°C
120°C
60°C
30°C
RthJK (K/W)
0.160
0.168
0.175
0.193
0.225
Constants for ZthJK calculation:
i
1
2
3
4
5
102
Rthi (K/W)
0.0058
0.031
0.072
0.0112
0.04
ti (s)
0.00054
0.098
0.54
12
12
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