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polyfet rf devices
L125
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
TM
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER LDMOS TRANSISTOR
15.0 Watts Single Ended
Package Style SO8 -1
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
Total
Device
Dissipation
50 Watts
Junction to
Case Thermal
Resistance
o
3.40 C/W
ABSOLUTE MAXIMUM RATINGS ( T = 25 oC )
Maximum
Junction
Temperature
200 oC
Storage
Temperature
oo
-65 C to 150 C
DC Drain
Current
3.0 A
Drain to
Gate
Voltage
70 V
Drain to
Source
Voltage
70 V
Gate to
Source
Voltage
20 V
RF CHARACTERISTICS ( 15.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gain
η Drain Efficiency
12
55
dB Idq = 0.40 A, Vds = 28.0 V, F = 1,000MHz
% Idq = 0.40 A, Vds = 28.0 V, F = 1,000 MHz
VSWR Load Mismatch Tolerance
20:1 Relative Idq = 0.40 A, Vds = 28.0 V, F =1,000MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss
Idss
Drain Breakdown Voltage
Zero Bias Drain Current
65 V Ids = 0.10 mA, Vgs = 0V
1.0 mA
Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Current
1 uA
Vds = 0V Vgs = 30V
Vgs Gate Bias for Drain Current
1
7V
Ids = 0.10 A, Vgs = Vds
gM Forward Transconductance
0.8 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
0.90
Ohm
Vgs = 20V, Ids = 2.50 A
Idsat
Saturation Current
5.50 Amp Vgs = 20V, Vds = 10V
Ciss Common Source Input Capacitance
30.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
1.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz
Coss Common Source Output Capacitance
15.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 03/08/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

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L125
POUT VS PIN GRAPH
L125 POUT VS PIN F=1000 MHZ; IDQ=0.4A; VDS=28V
22
20
18
16
14
12
10
8
6
0
6
Efficiency = 55%
0.2 0.4 0.6 0.8
1
PIN IN WATTS
1.2 1.4 1.6 1.8
POUT
IV CURVE
L2A 1 DICE IV
16.00
14.00
12.00
10.00
8.00
2
GAIN
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
VDSINVOLTS
vg=2v
Vg=4v
Vg=6v
vg=8v
vg=10v
vg=12v
S11 & S22 SMITH CHART
100
10
1
0.1
0
100
CAPACITANCE VS VOLTAGE
L2B 1 DIE CAPACITANCE
Coss
Crss
Ciss
5 10 15 20 25 30
VDS IN VOLTS
ID & GM VS VGS
L2B 1 DIE ID, GM vs VG
10 ID
1
GM
0.1
0 2 4 6 8 10 12 14
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 03/08/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com