L14F2.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 L14F2 데이타시트 다운로드

No Preview Available !

PACKAGE DIMENSIONS
0.195 (4.95)
0.178 (4.52)
0.230 (5.84)
0.209 (5.31)
0.030 (0.76)
NOM
0.255 (6.47)
0.225 (5.71)
0.500 (12.7)
MIN
HERMETIC SILICON
PHOTODARLINGTON
L14F1 L14F2
0.100 (2.54)
0.050 (1.27)
2
0.038 (0.97)
0.046 (1.16)
0.036 (0.92)
13
45°
Ø0.020 (0.51) 3X
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
SCHEMATIC
(CONNECTED TO CASE)
COLLECTOR
3
BASE 2
1
EMITTER
DESCRIPTION
The L14F1/L14F2 are silicon photodarlingtons mounted in a narrow angle, TO-18 package.
FEATURES
• Hermetically sealed package
• Narrow reception angle
2001 Fairchild Semiconductor Corporation
DS300306 6/01/01
1 OF 4
www.fairchildsemi.com

No Preview Available !

HERMETIC SILICON
PHOTODARLINGTON
L14F1 L14F2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(3,4,5 and 6)
Soldering Temperature (Flow)(3,4 and 6)
Collector to Emitter Breakdown Voltage
Collector to Base Breakdown Voltage
Emitter to Base Breakdwon Voltage
Power Dissipation (TA = 25°C)(1)
Power Dissipation (TC = 25°C)(2)
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
VCEO
VCBO
VEBO
PD
PD
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
25
25
12
300
600
Unit
°C
°C
°C
°C
V
V
V
mW
mW
NOTE:
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.
8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 0.05 mW/cm2 is approximately
equivalent to a tungsten source, at 2870°K, of 0.2 mW/cm2.
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions)
PARAMETER
Collector-Emitter Breakdown
Emitter-Base Breakdown
Collector-Base Breakdown
Collector-Emitter Leakage
Reception Angle at 1/2 Sensitivity
On-State Collector Current L14F1
On-State Collector Current L14F2
Rise Time
Fall Time
TEST CONDITIONS
SYMBOL MIN
TYP
MAX
UNITS
IC = 10 mA, Ee = 0
BVCEO
25
—V
IE = 100 µA, Ee = 0
BVEBO
12
—V
IC = 100 µA, Ee = 0
BVCBO
25
—V
VCE = 12 V, Ee = 0
ICEO
100 nA
θ ±8 Degrees
Ee = .125 mW/cm2, VCE = 5 V(7)
Ee = .125 mW/cm2, VCE = 5 V(7)
IC(ON)
IC(ON)
7.5
2.5
— mA
mA
IC = 10 mA, VCC = 5 V, RL =100
tr
300 µs
IC = 10 mA, VCC = 5 V, RL =100
tf
250 µs
www.fairchildsemi.com
2 OF 4
6/01/01 DS300306

No Preview Available !

Figure 1. Light Current vs. Collector to Emitter Voltage
100 5.0 mW/cm2
2.0
1.0
10
.5
.2
1.0 .1
.05
NORMALIZED TO:
VCE = 5 V
0.1 Ee = .2 mW/cm2
0 5 10 15 20 25 30 35
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
HERMETIC SILICON
PHOTODARLINGTON
L14F1 L14F2
Figure 2. Relative Light Current vs. Ambient Temperature
10
8
6
4
2
1.0
.8
.6
.4
.2
.1
.08
.06
VCE = 5 V
H = .2 mW/cm2
.04
.02
.01
-50
-25
0 25 50 75
T, TEMPERATURE (°C)
100 125
Figure 3. Spectral Response
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
400
500 600 700
800 900 1000 1100 1200
λ, WAVE LENGTH (NANOMETERS)
Figure 4. Angular Response
110
100
90
80
70
60
50
40
30
20
10
0-90° -70° -50° -30° -10° 10° 30° 50° 70° 90°
DEGREES
INPUT
LED56
LED
L14F
VCC
1.0 V
90%
OUTPUT
PULSE
10%
I RL OUTPUT
td
tr
tf
ts
INPUT PULSE
tON = td + tr
tOFF = ts + tf
Figure 5. Test Circuit and Voltage Waveforms
DS300306 6/01/01
3 OF 4
Figure 6. Light Current vs. Relative Switching Speed
100
LOAD RESISTANCE
10
NORMALIZED TO:
RL = 100
100
IL = 10 mA
10
1.0
0.10.01
1000
VCC = 10 V
0.1 1.0 10
RELATIVE SWITCHING SPEED
td + tr + ts + tf
100
www.fairchildsemi.com