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HERMETIC SILICON PHOTOTRANSISTOR
PACKAGE DIMENSIONS
0.195 (4.95)
0.178 (4.52)
0.230 (5.84)
0.209 (5.31)
0.030 (0.76)
NOM
0.255 (6.47)
0.225 (5.71)
0.500 (12.7)
MIN
L14G1 L14G2 L14G3
0.100 (2.54)
0.050 (1.27)
2
0.038 (0.97)
0.046 (1.16)
0.036 (0.92)
13
45°
Ø0.020 (0.51) 3X
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
SCHEMATIC
(CONNECTED TO CASE)
COLLECTOR
3
BASE 2
1
EMITTER
DESCRIPTION
The L14G1/L14G2/L14G3 are silicon phototransistors mounted in a narrow angle, TO-18 package.
FEATURES
• Hermetically sealed package
• Narrow reception angle
2001 Fairchild Semiconductor Corporation
DS300307 6/01/01
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www.fairchildsemi.com

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HERMETIC SILICON PHOTOTRANSISTOR
L14G1 L14G2 L14G3
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(3,4,5 and 6)
Soldering Temperature (Flow)(3,4 and 6)
Collector to Emitter Breakdown Voltage
Collector to Base Breakdown Voltage
Emitter to Base Breakdwon Voltage
Power Dissipation (TA = 25°C)(1)
Power Dissipation (TC = 25°C)(2)
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
VCEO
VCBO
VEBO
PD
PD
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
45
45
5
300
600
Unit
°C
°C
°C
°C
V
V
V
mW
mW
NOTE:
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.
8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 3.0 mW/cm2 is approximately
equivalent to a tungsten source, at 2870°K, of 10 mW/cm2.
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions)
PARAMETER
Collector-Emitter Breakdown
Emitter-Base Breakdown
Collector-Base Breakdown
Collector-Emitter Leakage
Reception Angle at 1/2 Sensitivity
On-State Collector Current L14G1
On-State Collector Current L14G2
On-State Collector Current L14G3
Turn-On Time
Turn-Off Time
Saturation Voltage
TEST CONDITIONS
SYMBOL MIN
TYP
MAX
UNITS
IC = 10 mA, Ee = 0
IE = 100 µA, Ee = 0
IC = 100 µA, Ee = 0
VCE = 10 V, Ee = 0
Ee = 0.5 mW/cm2, VCE = 5 V(7,8)
Ee = 0.5 mW/cm2, VCE = 5 V(7,8)
Ee = 0.5 mW/cm2, VCE = 5 V(7,8)
IC = 2 mA, VCC = 10 V, RL =100
IC = 2 mA, VCC = 10 V, RL =100
IC = 1.0 mA, Ee = 3.0 mW/cm2(7,8)
BVCEO
BVEBO
BVCBO
ICEO
θ
IC(ON)
IC(ON)
IC(ON)
ton
toff
VCE(SAT)
45
5.0
45
1.0
0.5
2.0
—V
—V
—V
100 nA
±10 Degrees
— mA
mA
mA
8 µs
7 µs
0.40 V
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6/01/01 DS300307

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HERMETIC SILICON PHOTOTRANSISTOR
Figure 1. Light Current vs. Collector to Emitter Voltage
10
1
.1
.01
.01
Ee = 20 mW/cm2
Ee = 10 mW/cm2
Ee = 5 mW/cm2
Ee = 2 mW/cm2
Ee = 1 mW/cm2
NORMALIZED TO:
Ee = 10 mW/cm2
VCE = 5 V
.1 1 10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
100
10
Figure 3. Normalized Light Current vs. Temperature
10
L14G1 L14G2 L14G3
Figure 2. Light Current vs. Temperature
10
1
.1
NORMALIZED TO:
VCE = 5 V
Ee = 10 mW/cm2
.01
.1 1 10 100
Ee - TOTAL IRRADIANCE IN mW/cm2
Figure 4. Switching Times vs. Output Current
RL = 1 K
1
NORMALIZED TO:
VCE = 5 V
Ee = 10 mW/cm2
TA = 25°C
0.1
-50 0
50 100
150
TA, TEMPERATURE (°C)
106
105
104
103
102
10
1
.1 0
Figure 5. Dark Current and Temperature
NORMALIZED TO:
ID@ 25°C
VCEO = 10 V
25 50 75 100 125
TA, TEMPERATURE (°C)
150
DS300307 6/01/01
1
.01
.1
NORMALIZED TO:
VCE = 10 V
IL = 2 mA
Ion = Ioff = 5 µsec
RL = 100
1.0 10
IL, OUTPUT CURRENT (mA)
RL = 100
RL = 10
100
Figure 6. Normalized Light Current vs. Temperature
Both Emitter (LED 55B) and Detector
(L14G) at Same Temperature
1.4
1.2 LED 55B L14G
1.0
.8
.6
NORMALIZED TO:
LED 55B INPUT = 10 mA
.4 VCE = 10 V
IL = 100 µA
TA = 25°C
.2
.0 55 35
15 5 25 45
TA, TEMPERATURE (°C)
65 85
105
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