L14P1.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 L14P1 데이타시트 다운로드

No Preview Available !

HERMETIC SILICON PHOTOTRANSISTOR
PACKAGE DIMENSIONS
0.195 (4.95)
0.178 (4.52)
0.230 (5.84)
0.209 (5.31)
0.030 (0.76)
NOM
0.255 (6.47)
0.225 (5.71)
0.500 (12.7)
MIN
L14P1 L14P2
0.100 (2.54)
0.050 (1.27)
2
0.038 (0.97)
0.046 (1.16)
0.036 (0.92)
13
45°
Ø0.020 (0.51) 3X
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
SCHEMATIC
(CONNECTED TO CASE)
COLLECTOR
3
BASE 2
1
EMITTER
DESCRIPTION
The L14P1/L14P2 are silicon phototransistors mounted in a narrow angle, TO-18 package.
FEATURES
• Hermetically sealed package
• Narrow reception angle
• Devices can be used as a photodiode by wiring the collector and base leads.
2001 Fairchild Semiconductor Corporation
DS300309 6/01/01
1 OF 4
www.fairchildsemi.com

No Preview Available !

HERMETIC SILICON PHOTOTRANSISTOR
L14P1 L14P2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(3,4,5 and 6)
Soldering Temperature (Flow)(3,4 and 6)
Collector to Emitter Breakdown Voltage
Collector to Base Breakdown Voltage
Emitter to Base Breakdwon Voltage
Power Dissipation (TA = 25°C)(1)
Power Dissipation (TC = 25°C)(2)
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
VCEO
VCBO
VEBO
PD
PD
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
30
40
5
300
600
Unit
°C
°C
°C
°C
V
V
V
mW
mW
NOTE:
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.
8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 3.0 mW/cm2 is approximately
equivalent to a tungsten source, at 2870°K, of 10 mW/cm2.
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions)
PARAMETER
Collector-Emitter Breakdown
Emitter-Base Breakdown
Collector-Base Breakdown
Collector-Emitter Leakage
Reception Angle at 1/2 Sensitivity
On-State Collector Current L14P1
On-State Collector Current L14P2
On-State Photodiode Current
Rise Time
Fall Time
Saturation Voltage L14P1
Saturation Voltage L14P2
TEST CONDITIONS
SYMBOL MIN
TYP
MAX
UNITS
IC = 10 mA, Ee = 0
BVCEO
30
—V
IE = 100 µA, Ee = 0
BVEBO
5.0
—V
IC = 100 µA, Ee = 0
BVCBO
40
—V
VCE = 12 V, Ee = 0
ICEO
100 nA
θ ±8 Degrees
Ee = 0.5 mW/cm2, VCE = 5 V(7,8)
IC(ON)
6.5
— mA
Ee = 0.5 mW/cm2, VCE = 5 V(7,8)
IC(ON)
13.0
mA
Ee = 0.3 mW/cm2, VCB = 5 V
ICB(ON)
6.0
µA
IC = 10 mA, VCC = 5 V, RL =100
tr
10 µs
IC = 10 mA, VCC = 5 V, RL =100
IC = 0.8 mA, Ee = 0.6 mW/cm2(7,8)
IC = 1.6 mA, Ee = 0.6 mW/cm2(7,8)
tf
VCE(SAT)
VCE(SAT)
12 µs
0.40 V
0.40 V
www.fairchildsemi.com
2 OF 4
6/01/01 DS300309

No Preview Available !

HERMETIC SILICON PHOTOTRANSISTOR
Figure 1. Light Current vs. Collector to Emitter Voltage
10
8
6 NORMALIZED TO:
4 Ee = 1 mW/cm2
VCE = 5 V
2 TA = 25°C
PULSED
1
.8
tp = 300 µsec
.6
Ee = 10 mW/cm2
Ee = 2 mW/cm2
Ee = 1 mW/cm2
Ee = 20 mW/cm2
.4
Ee = 5 mW/cm2
Ee = 0.5 mW/cm2
.2
Ee = 0.2 mW/cm2
.1
.08
.06
Ee = 0.1 mW/cm2
.04
.02
.01
.01 .02 .04 .06 .08 .1 .2 .4 .6 .8 1 2 4 6 8 10 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 3. Dark Current vs. Temperature
105
NORMALIZED TO:
104 TA = 25°C
VCE = 10 V
103
102
10
1
0.1 0 10 20 30 40 50 60 70 80 90 100
TA, TEMPERATURE (°C)
L14P1 L14P2
Figure 2. Light Current vs. Temperature
4
2
1
.8
.6
.4
.2
NORMALIZED TO:
.1
.08
.06
.04
VCE = 5 V
Ee = 1 mW/cm2
TA = 25°C
PULSED
.02 tp = 300 µsec
.01
.1
.2 .4 .6 .8 1
2
4 6 8 10
20
Ee - TOTAL IRRADIANCE IN mW/cm2
Figure 4. Light Current vs. Temperature
4
20 mA
2 10 mA
1 5 mA
.8
.6
.4
2 mA
.2
1 mA
.1
.08
.06 0.5 mA
.04
IF = 50 mA
.02 NORMALIZED TO: IF = 5 mA, VCE = 5 V, TA = 25°C
PULSED: GAAS SOURCE (1N6265), tp = 300 µsec, TJ = TA
.01
-50 -26
0 26
50
TA, TEMPERATURE (°C)
75
100
Figure 5. Angular and Spectral Response
110
100
90
80
60
60
50
40
30
20
10
1
.9
.8
.7
.6
.5
.4
.3
.2
.1
-40 -20 0 20 40 500 600 700 800 900 1000 1100
θ, ANGULAR DISPLACEMENT
FROM OPTICAL AXIS
(DEGREES)
λ, WAVE LENGTH
(NANOMETERS)
DS300309 6/01/01
Figure 6. Switching Speed vs. Bias
100
80
60
40
RL = 1000
20 RL = 500
RL = 250
10
8
6
RL = 1000
RL = 500
RL = 250
4
2 RL = 100
RL = 100
1
.8
.6 NORMALIZED TO:
.4 VCC = 5 V
IC = 10 mA
.2 RL = 100
TA = 25°C
.1
.1 .2 .4 .6 .8 1
RISE TIME
RL = 50
NORMALIZED TO:
VCC = 5 V
IC = 10 mA
RL = 100
TA = 25°C
RL = 50
2 4 8 10 .1 .2 .4 .6 .8 1 2 4 6 8 10
ICE, OUTPUT CURRENT (mA)
FALL TIME
3 OF 4
www.fairchildsemi.com