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New Product
VBT3045C
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.30 V at IF = 5.0 A
TMBS ®
TO-263AB
K
2
1
VBT3045C
PIN 1
K
PIN 2
HEATSINK
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Not recommended for PCB bottom side wave mounting
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
45 V
IFSM
200 A
VF at IF = 15 A
0.39 V
TJ max.
150 °C
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Operating junction and storage temperature range
TJ, TSTG
VBT3045C
45
30
15
200
- 40 to + 150
UNIT
V
A
A
°C
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Document Number: 89360 For technical questions within your region, please contact one of the following:
Revision: 26-Oct-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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VBT3045C
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
IF = 5 A
IF = 7.5 A
IF = 15 A
IF = 5 A
IF = 7.5 A
IF = 15 A
Reverse current per diode
VR = 45 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
TYP.
0.42
0.44
0.49
0.30
0.33
0.39
-
17
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
per device
RθJC
VBT3045C
1.6
0.85
MIN.
-
-
0.57
-
-
0.48
2000
50
UNIT
V
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-263AB
VBT3045C-E3/4W
1.38
TO-263AB
VBT3045C-E3/8W
1.38
PACKAGE CODE
4W
8W
BASE QUANTITY
50/tube
800/reel
DELIVERY MODE
Tube
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
35
30
25
20
15
10
5
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100 110 120 130 140
Case Temperature (°C)
150
Fig. 1 - Maximum Forward Current Derating Curve
9
8 D = 0.5 D = 0.8
D = 0.3
7
6 D = 0.2
5
4 D = 0.1
3
D = 1.0
T
2
1
D = tp/T
tp
0
0 2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
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For technical questions within your region, please contact one of the following: Document Number: 89360
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 26-Oct-10

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New Product
VBT3045C
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6
Instantaneous Forward Voltage (V)
0.7
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100 000
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
1
0.1
0.01
TA = 150 °C
TA = 125 °C
TA = 100 °C
TA = 25 °C
10
Junction to Case
1
0.001
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.190 (4.83)
0.160 (4.06)
0.360 (9.14)
0.320 (8.13)
1K2
0.624 (15.85)
0.591 (15.00)
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0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.055 (1.40)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
Mounting Pad Layout
0.42 (10.66) MIN.
0.670 (17.02)
0.591 (15.00)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.33 (8.38) MIN.
0.15 (3.81) MIN.
Document Number: 89360 For technical questions within your region, please contact one of the following:
Revision: 26-Oct-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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Document Number: 91000
Revision: 18-Jul-08
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