3DD5044.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 3DD5044 데이타시트 다운로드

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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5044 FOR LOW FREQUENCY
R
3DD5044
MAIN CHARACTERISTICS
BVCBO
IC
VCE(sat)
tf
1700
22
3
0.3
V
A
V(max)
s(max)
Package
TO-3P(LH)
APPLICATIONS
z z Horizontal deflection
output for HDTV
FEATURES
z3DD5044 NPN
z 3DD5044 is high breakdown
voltage of NPN bipolar transistor.
The main process of manufacture:
high voltage mesa type process,
, triple diffused process etc.,
adoption of half plastic packge.
RoHS
RoHS product.
ORDER MESSAGE
123
EQUIVALENT CIRCUIT
Order codes
Marking Halogen Free
3DD5044-O-AL-N-D D5044
MARKING
NO
Package Packaging
TO-3P(LH)
Foam
Device
Weight
9.50 g(typ)
www.DataSheet4U.com
Trademark
Part No.
Year month
For example
8 2008 10 10
october
200911E
1/6

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R 3DD5044
ABSOLUTE RATINGS (Tc=25 )
Parameter
CollectorBase Voltage
CollectorEmitter Voltage
EmitterBase Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Max. Junction Temperature
Storage Temperature Range
Symbol
BVCBO
BVCEO
BVEBO
IC
ICP
IB
PC
Tj
TSTG
Value
1700
750
6
22
44
11
200
150
-55~+150
Unit
V
V
V
A
A
W
ELECTRICAL CHARACTERISTICS (Tc=25 )
Parameter
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
HFE
VCE(sat)
VBE(sat)
tf
ts
ft
Tests conditions
IC=10mA,IB=0
IC=1mA,IE=0
IE=1mA,IC=0
VCB=1500V, IE=0
VEB=6V, IC=0
VCE = 5 V, IC = 2 A
VCE = 5 V, IC = 11 A
IC=11A, IB=2.75A
IC=11A, IB=2.75A
IC=10A,2IB1=-IB2=5A
fH=15.75kHz
VCE=10V, IC=0.1A
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Min
750
1700
6
20
5
2
Max
1
10
60
3
1.3
0.3
3.5
Unit
V
V
V
mA
µA
V
V
µs
µs
MHz
200911E
2/6

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R
ELECTRICAL CHARACTERISTICS CURVES
3DD5044
IC – VCE
HFE – IC
VCE V
COMMON EMITTER VCE=5V
COMMON EMITTER
VCE=5V
IC A
VCE - IB
COMMON
EMITTER
TC=25
IB A
VCE sat - IC
COMMON
EMITTER
TC=25
IC A
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200911E
3/6

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R
IC - VBE
COMMON
EMITTER
VCE=5V
VBE V
PC-TC
INFINITE HEAT SINK
Tc( )
3DD5044
SOA
CURVES MUST BE
DERATED LINEARLY
WITH INCREASE IN
TEMPERATURE
TC=25
DC
VCE V
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200911E
4/6

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R
PACKAGE MECHANICAL DATA
TO-3P(LH)
3DD5044
Unit mm
www.DataSheet4U.com
200911E
5/6