C2026.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 C2026 데이타시트 다운로드

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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC2026
DESCRIPTION
·Low Noise
NF= 3.0dB TYP. @ f= 500MHz
·High Power Gain
Gpe= 15dB TYP. @ f= 500MHz
·High Gain Bandwidth Product
fT= 2.0GHz TYP.
APPLICATIONS
·Designed for use in low noise amplifiers in the VHF~UHF
band.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
30 V
VCEO Collector-Emitter Voltage
14 V
VEBO Emitter-Base Voltage
3V
IC Collector Current-Continuous
Collector Power Dissipation
PC @TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
www.DataSheet4U.com
50 mA
0.25 W
150
-55~150
isc Websitewww.iscsemi.cn

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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC2026
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
ICBO Collector Cutoff Current
VCB= 15V; IE= 0
0.1 μA
IEBO Emitter Cutoff Current
VEB= 2V; IC= 0
0.1 μA
hFE DC Current Gain
IC= 10mA ; VCE= 10V
25 200
fT
Current-Gain—Bandwidth Product
IC= 10mA ; VCE= 10V
15 2.0
GHz
COB Output Capacitance
IE= 0 ; VCB= 10V; f= 1.0MHz
0.75 1.1 pF
Gpe Power Gain
NF Noise Figure
VCE= 10 V,IC= 10mA; f= 500MHz
VCE= 10 V,IC= 3mA; f= 500MHz;
RG= 50Ω
13 15
dB
3 4 dB
www.DataSheet4U.com
isc Websitewww.iscsemi.cn
2