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FSGM0465R
Green-Mode Fairchild Power Switch (FPS™)
March 2010
Features
ƒ Soft Burst-Mode Operation for Low Standby Power
Consumption and Low Noise
ƒ Precision Fixed Operating Frequency: 66kHz
ƒ Pulse-by-Pulse Current Limit
ƒ Various Protection Functions: Overload Protection
(OLP), Over-Voltage Protection (OVP), Abnormal
Over-Current Protection (AOCP), Internal Thermal
Shutdown (TSD) with Hysteresis, Output-Short
Protection (OSP), and Under-Voltage Lockout
(UVLO) with Hysteresis
ƒ Auto-Restart Mode
ƒ Internal Startup Circuit
ƒ Internal High-Voltage SenseFET: 650V
ƒ Built-in Soft-Start: 15ms
Applications
ƒ Power Supply for LCD TV and Monitor, STB and DVD
Combination
Description
The FSGM0465R is an integrated Pulse Width
Modulation (PWM) controller and SenseFET specifically
designed for offline Switch-Mode Power Supplies
(SMPS) with minimal external components. The PWM
controller includes an integrated fixed-frequency
oscillator, Under-Voltage Lockout (UVLO), Leading-
Edge Blanking (LEB), optimized gate driver, internal
soft-start, temperature-compensated precise current
sources for loop compensation, and self-protection
circuitry. Compared with a discrete MOSFET and PWM
controller solution, the FSGM series can reduce total
cost, component count, size, and weight; while
simultaneously increasing efficiency, productivity, and
system reliability. This device provides a basic platform
suited for cost-effective design of a flyback converter.
Ordering Information
Part Number
FSGM0465RWDTU
Package
Operating
Junction
Temperature
Current
Limit
RDS(ON)
(Max.)
Output Power Table(2)
230VAC ± 15%(3)
85-265VAC
Adapter(4)
Open
Frame(5)
Adapter(4)
Open
Frame(5)
Replaces
Device
TO-220F
6-Lead(1)
W-Forming
-40°C ~
+125°C
1.80A 2.6Ω
60W
70W
33W
48W FSDM0465RE
FSGM0465RUDTU
TO-220F
6-Lead(1)
U-Forming
-40°C ~
+125°C
1.80A 2.6Ω
60W
70W
33W
48W FSDM0465RE
FSGM0465RLDTU
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TO-220F
6-Lead(1)
L-Forming
-40°C ~
+125°C
1.80A 2.6Ω
60W
70W
33W
48W FSDM0465RE
Notes:
1. Pb-free package per JEDEC J-STD-020B.
2. The junction temperature can limit the maximum output power.
3. 230VAC or 100/115VAC with voltage doubler.
4. Typical continuous power in a non-ventilated enclosed adapter measured at 50°C ambient temperature.
5. Maximum practical continuous power in an open-frame design at 50°C ambient temperature.
© 2009 Fairchild Semiconductor Corporation
FSGM0465R • Rev. 1.0.2
www.fairchildsemi.com

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Application Circuit
Figure 1. Typical Application Circuit
Internal Block Diagram
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© 2009 Fairchild Semiconductor Corporation
FSGM0465R • Rev. 1.0.2
Figure 2. Internal Block Diagram
2
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Pin Configuration
6. VSTR
5. N.C.
4. FB
3. VCC
2. GND
1. Drain
FSGM0465R
Figure 3. Pin Configuration (Top View)
Pin Definitions
Pin #
1
2
3
4
5
6
Name
Drain
GND
VCC
FB
N.C.
VSTR
Description
SenseFET Drain. High-voltage power SenseFET drain connection.
Ground. This pin is the control ground and the SenseFET source.
Power Supply. This pin is the positive supply input, which provides the internal operating
current for both startup and steady-state operation.
Feedback. This pin is internally connected to the inverting input of the PWM comparator.
The collector of an opto-coupler is typically tied to this pin. For stable operation, a capacitor
should be placed between this pin and GND. If the voltage of this pin reaches 6V, the
overload protection triggers, which shuts down the FPS.
No connection.
Startup. This pin is connected directly, or through a resistor, to the high-voltage DC link.
At startup, the internal high-voltage current source supplies internal bias and charges the
external capacitor connected to the VCC pin. Once VCC reaches 12V, the internal current
source (ICH) is disabled.
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© 2009 Fairchild Semiconductor Corporation
FSGM0465R • Rev. 1.0.2
3
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Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device
reliability. The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Min.
Max.
Unit
VSTR
VDS
VCC
VFB
IDM
IDS
EAS
PD
TJ
TSTG
VISO
VSTR Pin Voltage
Drain Pin Voltage
VCC Pin Voltage
Feedback Pin Voltage
Drain Current Pulsed
Continuous Switching Drain Current(6)
Single Pulsed Avalanche Energy(7)
Total Power Dissipation(TC=25°C)(8)
Maximum Junction Temperature
Operating Junction Temperature(9)
Storage Temperature
Minimum Isolation Voltage(10)
TC=25°C
TC=100°C
-0.3
-40
-55
2.5
650
650
26
12.0
10
5.0
3.2
250
45
150
+125
+150
V
V
V
V
A
A
A
mJ
W
°C
°C
°C
kV
ESD
Electrostatic
Human Body Model, JESD22-A114
Discharge Capability Charged Device Model, JESD22-C101
2
2
kV
Notes:
6. Repetitive peak switching current when the inductive load is assumed: Limited by maximum duty (DMAX=0.75)
and junction temperature (see Figure 4).
7. L=45mH, starting TJ=25°C.
8. Infinite cooling condition (refer to the SEMI G30-88).
9. Although this parameter guarantees IC operation, it does not guarantee all electrical characteristics.
10. The voltage between the package back side and the lead is guaranteed.
Figure 4. Repetitive Peak Switching Current
Thermal Impedance
TA=25°C unless otherwise specified.
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Parameter
θJA Junction-to-Ambient Thermal Impedance(11)
θJC Junction-to-Case Thermal Impedance(12)
Notes:
11. Infinite cooling condition (refer to the SEMI G30-88).
12. Free standing with no heat-sink under natural convection.
© 2009 Fairchild Semiconductor Corporation
FSGM0465R • Rev. 1.0.2
4
Value
62.5
3
Unit
°C/W
°C/W
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Electrical Characteristics
TJ = 25°C unless otherwise specified.
Symbol
Parameter
Conditions
Min.
SenseFET Section
BVDSS
IDSS
RDS(ON)
CISS
COSS
tr
tf
td(on)
td(off)
Drain-Source Breakdown Voltage
Zero-Gate-Voltage Drain Current
Drain-Source On-State Resistance
Input Capacitance(13)
Output Capacitance(13)
Rise Time
Fall Time
Turn-on Delay Time
Turn-off Delay Time
Control Section
fS
ΔfS
DMAX
DMIN
IFB
VSTART
VSTOP
VOP
tS/S
Switching Frequency
Switching Frequency Variation(13)
Maximum Duty Ratio
Minimum Duty Ratio
Feedback Source Current
UVLO Threshold Voltage
VCC Operating Range
Internal Soft-Start Time
Burst-Mode Section
VBURH
VBURL
Hys
Burst-Mode Voltage
Protection Section
ILIM Peak Drain Current Limit
VSD Shutdown Feedback Voltage
IDELAY
tLEB
Shutdown Delay Current
Leading-Edge Blanking Time(13)(14)
VOVP Over-Voltage Protection
tOSP
www.DataSheeVt4OUSP.comOPruottpeucttiSohno(1r3t)
tOSP_FB
Threshold Time
Threshold VFB
VFB Blanking Time
TSD Thermal Shutdown Temperature(13)
Hys
VCC = 0V, ID = 250μA
VDS = 520V, TA = 125°C
VGS=10V, ID =1A
VDS = 25V, VGS = 0V,f=1MHz
VDS = 25V, VGS = 0V,f=1MHz
VDS = 325V, ID = 4A, RG=25
VDS = 325V, ID = 4A, RG=25
VDS = 325V, ID = 4A, RG=25
VDS = 325V, ID = 4A, RG=25
VCC = 14V, VFB = 4V,
-25°C < TJ < +125°C
VCC = 14V, VFB = 4V
VCC = 14V, VFB = 0V
VFB = 0
VFB = 0V, VCC Sweep
After Turn-on, VFB = 0V
VSTR = 40V, VCC Sweep
VCC = 14V, VFB Sweep
di/dt = 300mA/μs
VCC = 14V, VFB Sweep
VCC = 14V, VFB = 4V
VCC Sweep
OSP Triggered when
tON<tOSP & VFB>VOSP
(Lasts Longer than tOSP_FB)
Shutdown Temperature
Hysteresis
650
60
65
160
11
7.0
13
0.6
0.4
1.64
5.5
2.5
23.0
1.0
1.8
2.0
130
Typ. Max.
250
2.1 2.6
436
65
24
24
13
30
66 72
±5 ±10
70 75
0
210 260
12 13
7.5 8.0
23
15
0.7 0.8
0.5 0.6
200
1.80 1.96
6.0 6.5
3.3 4.1
300
24.5 26.0
1.2 1.4
2.0 2.2
2.5 3.0
140 150
30
Unit
V
μA
pF
pF
ns
ns
ns
ns
kHz
%
%
%
μA
V
V
V
ms
V
V
mV
A
V
μA
ns
V
μs
V
μs
°C
°C
© 2009 Fairchild Semiconductor Corporation
FSGM0465R • Rev. 1.0.2
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