J6810D.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 J6810D 데이타시트 다운로드

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FJAF6810D
High Voltage Color Display Horizontal
Deflection Output (Damper Diode Built-In)
• High Collector-Base Breakdown Voltage : BVCBO = 1500V
• High Switching Speed : tF(typ.) =0.1µs
• For Color TV
1 TO-3PF
1.Base 2.Collector 3.Emitter
Equivalent Circuit
C
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP* Collector Current (Pulse)
PC Collector Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
B
35typ.
E
Rating
1500
750
6
10
20
60
150
-55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
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Symbol
ICES
Parameter
Collector Cut-off Current
Test Conditions
VCB=1500V, RBE=0
Min Typ Max Units
1 mA
ICBO
Collector Cut-off Current
VCB=800V, IE=0
10 µA
IEBO
Emitter Cut-off Current
VEB=4V, IC=0
40 250 mA
BVEBO
Base-Emitter Breakdown Voltage
IE=300mA, IC=0
6
V
hFE1
hFE2
DC Current Gain
VCE=5V, IC=1A
VCE=5V, IC=6A
7
58
VCE(sat)
Collector-Emitter Saturation Voltage IC=6A, IB=1.5A
3V
VBE(sat)
Base-Emitter Saturation Voltage
IC=6A, IB=1.5A
1.5 V
VF
Damper Diode Turn On Voltage
IF = 6A
2V
tSTG*
tF*
Storage Time
Fall Time
VCC=200V, IC=6A, RL=33
IB1=1.2A, IB2= - 2.4A
3 µs
0.2 µs
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
RθjC
Thermal Resistance, Junction to Case
Typ
Max
2.08
Units
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. B, August 2001

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Typical Characteristics
10
IB=2.0A
8
IB=1.0A
6 IB=0.8A
IB=0.6A
IB=0.4A
4
IB=0.2A
2
0
0 2 4 6 8 10 12 14 16 18
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10
I =5I
CB
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1
Ta = 125 oC
Ta = 25 oC
Ta = - 25 oC
0.1
1
10
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
20
18
16
14
12
10
8
6
4
2
0
0.0
Ta = 25 oC
Ta = - 25 oC
0.3 0.6
Ta = 125 oC
0.9 1.2
VBE [V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
1.5
©2001 Fairchild Semiconductor Corporation
100
V = 5V
CE
Ta = 125oC
10
Ta = 25oC
Ta = - 25oC
1
0.1 1 10
IC [A], COLLECTOR CURRENT
Figure 2. DC current Gain
I =3I
CB
10
1
Ta = 125 oC
Ta = 25 oC
Ta = - 25 oC
0.1
1 10
IC [A], COLLECTOR CURRENT
Figure 4. Collector-Emitter Saturation Voltage
10
I = 1.2A, I = 6A
B1 C
V = 200V
CC
tSTG
1
tF
0.1
0.01
1
10
IB2 [A], REVERSE BASE CURRENT
Figure 6. Resistive Load Switching Time
Rev. B, August 2001

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Typical Characteristics (Continued)
10
tSTG
1
tF
0.1
0.01
1
I = -2.4A, I = 6A
B2 C
V = 200V
CC
10
IB1 [A], FORWARD BASE CURRENT
Figure 7. Resistive Load Switching Time
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30
R = 0, I = 15A
B2 B1
25
V
CC
=
30V,
L
=
200µH
20
15
10
VBE(off) = -6V
5
VBE(off) = -3V
0
10
100
1000
10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Reverse Bias Safe Operating Area
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
TC [oC], CASE TEMPERATURE
Figure 11. Power Derating
©2001 Fairchild Semiconductor Corporation
10
tSTG
1
tF
0.1
0.01
1
I = 1.2A, I = -2.4A
B1 B2
V = 200V
CC
10
IC [A], COLLECTOR CURRENT
Figure 8. Resistive Load Switching Time
100
IC (Pulse) t = 100ms t = 10ms
10
IC (DC)
t = 1ms
1
0.1
T = 25oC
C
Single Pulse
0.01
1
10
100
1000
10000
Figure 10. Forward Bias Safe Operating Area
Rev. B, August 2001