2SA670.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 2SA670 데이타시트 다운로드

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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA670
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
APPLICATIONS
·Inverters;converters
·Power amplification
·Switching regulator ,driver
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-50
-50
-5
-3
25
150
-55~150
UNIT
V
V
V
A
W
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ,IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A
ICBO Collector cut-off current
VCB=-50V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE DC current gain
IC=-1A ; VCE=-4V
fT Transition frequency
IC=-0.5A ; VCE=-10V
Product Specification
2SA670
MIN TYP. MAX UNIT
-50 V
-50 V
-5 V
-1.0 V
-100 μA
-100 μA
35 200
15 MHz
2

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Inchange Semiconductor
Silicon PNP Power Transistors
PACKAGE OUTLINE
Product Specification
2SA670
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3