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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA755
DESCRIPTION
·With TO-220 package
·Complement to type 2SC1419
·Note:Type 2SA754 with short pin
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE UNIT
-50 V
-50 V
-4 V
-2 A
20 W
150
-55~150

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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,RBE=
V(BR)CBO Collector-base breakdown voltage
IC=-5mA ,IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-5mA ,IC=0
VCEsat Collector-emitter saturation voltage IC=-1.5A; IB=-0.15A
VBE Base-emitter on voltage
IC=-1A ; VCE=-4V
ICBO Collector cut-off current
VCB=-20V; IE=0
hFE-1
DC current gain
IC=-1A ; VCE=-4V
hFE-2
DC current gain
IC=-0.1A ; VCE=-4V
fT Transition frequency
IC=-0.5A ; VCE=-4V
‹ hFE-1 Classifications
ABC
35-70 60-120 100-200
Product Specification
2SA755
MIN TYP. MAX UNIT
-50 V
-50 V
-4 V
-1.3 V
-1.5 V
-100 μA
35 200
35
50 MHz
2

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Inchange Semiconductor
Silicon PNP Power Transistors
PACKAGE OUTLINE
Product Specification
2SA755
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3