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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA753
DESCRIPTION
·With TO-3 package
·Wide area of safe operation
·Complement to type 2SC1343
APPLICATIONS
·For 100W audio amplifier power output
applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-140
-110
-5
-10
-12
100
150
-55~150
UNIT
V
V
V
A
A
W

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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;RBE=
V(BR)CBO Collector-base breakdown voltage IC=-5mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-5mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-1A
VBE Base-emitter on voltage
IC=-1A ; VCE=-5V
ICBO Collector cut-off current
VCB=-30V; IE=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-10A ; VCE=-5V
fT Transition frequency
IC=-1A ; VCE=-5V
‹ hFE-1 Classifications
ABC
30-60 50-120 100-200
Product Specification
2SA753
MIN TYP. MAX UNIT
-110 V
-140
V
-5 V
-1.5 V
-1.5 V
-1 mA
30 200
15
20 MHz
2

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Inchange Semiconductor
Silicon PNP Power Transistors
PACKAGE OUTLINE
Product Specification
2SA753
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3