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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA748
DESCRIPTION
·With TO-220 package
·Complement to type 2SC1398
·Large collector power dissipation
APPLICATIONS
·For medium power amplifier applicattions
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-70
-50
-5
-2
-3
15
150
-55~150
UNIT
V
V
V
A
A
W

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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-1mA ,IE=0
VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A
VBEsat Base-emitter saturation voltage
IC=-2A; IB=-0.2A
ICBO Collector cut-off current
VCB=-40V; IE=0
ICEO Collector cut-off current
VCE=-20V; IB=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.1A ; VCE=-5V
hFE-2
DC current gain
IC=-1A ; VCE=-5V
fT Transition frequency
IC=0.5A ; VCE=-5V
‹ hFE-2 Classifications
PQ
R
50-100 80-160 120-220
Product Specification
2SA748
MIN TYP. MAX UNIT
-50 V
-70 V
-0.6 -1.0
V
-1.0 -1.5
V
-1 μA
-100 μA
-100 μA
30
50 220
120 MHz
2

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Inchange Semiconductor
Silicon PNP Power Transistors
PACKAGE OUTLINE
Product Specification
2SA748
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3