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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA738
DESCRIPTION
·With TO-126 package
·High current
·Complement to type 2SC1368
APPLICATIONS
·Driver stages in high-fidelity amplifiers
and television circuits
PINNING
PIN
DESCRIPTION
1 Emitter
2
Collector;connected to
mounting base
3 Base
·
Absolute maximum ratings (Ta=25)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter -base voltage
Open collector
IC Collector current
ICM Collector current-Peak
Pt Total power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
-25
-25
-5
-1.5
-2.0
8
150
-65~150
UNIT
V
V
V
A
A
W

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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA
VBE Base-emitter voltage
IC=-500mA ; VCE=-2V
ICBO Collector cut-off current
IEBO Emitter cut-off current
hFE-1
DC current gain
VCB=-25V; IE=0
VEB=-5V; IC=0
IC=-150mA ; VCE=-2V
hFE-2
DC current gain
IC=-500mA ; VCE=-2V
fT Transition frequency
IC=-50mA; VCE=-5V
Product Specification
2SA738
MIN TYP. MAX UNIT
-25 V
-0.5 V
-1.0 V
-1.0 μA
-1.0 μA
35 320
25
160 MHz
2

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Inchange Semiconductor
Silicon PNP Power Transistors
PACKAGE OUTLINE
Product Specification
2SA738
Fig.2 Outline dimensions
3