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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA699 2SA699A
DESCRIPTION
·With TO-202 package
·Complement to type 2SC1226/1226A
APPLICATIONS
·Power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-202) and symbol
Absolute maximum ratings (Ta=25)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SA699
2SA699A
Open emitter
VCEO
Collector-emitter voltage
2SA699
2SA699A
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
ICM Collector current-peak
IBB Base current
PC Collector power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
-40
-50
-32
-40
-5
-2
-3
-0.6
10
150
-55~150
UNIT
V
V
V
A
A
A
W

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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A
VBEsat Base-emitter saturation voltage
IC=-2A ;IB=B -0.2 A
V(BR)CBO
Collector-base
breakdown voltage
2SA699
2SA699A
IC=-1mA;IE=0
V(BR)CEO
Collector-emitter
breakdown voltage
2SA699
2SA699A
IC=-10mA; IB=0
ICBO Collector cut-off current
VCB=-20V; IE=0
ICEO Collector cut-off current
VCE=-12V; IB=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE DC current gain
IC=-1A ; VCE=-5V
COB Output capacitance
IE=0; VCB=-5V;f=1MHz
fT Transition frequency
IE=0.5A ; VCB=-5V
‹ hFE classifications
PQ
R
50-100 80-160 100-220
Product Specification
2SA699 2SA699A
MIN TYP. MAX UNIT
-0.4 -1.0
V
-1.5 V
-40
V
-50
-32
V
-40
-1 μA
-100 μA
-100 μA
50 220
70 pF
150 MHz
2

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Inchange Semiconductor
Silicon PNP Power Transistors
PACKAGE OUTLINE
Product Specification
2SA699 2SA699A
Fig.2 outline dimensions
3

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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA699 2SA699A
4

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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA699 2SA699A
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