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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA656
DESCRIPTION
·With TO-3 package
·Wide area of safe operation
·Complement to type 2SC519
APPLICATIONS
·For audio frequency and power amplifier
applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-130
-130
-5
-7
50
150
-55~150
UNIT
V
V
V
A
W

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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0
V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-1A
VBEsat Base-emitter saturation voltage
IC=-5A; IB=-1A
ICBO Collector cut-off current
VCB=-130V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE DC current gain
IC=-1A ; VCE=-5V
COB Collector output capacitance
IE=0; VCB=-10V;f=1MHz
fT Transition frequency
IC=-1A ; VCE=-10V
Product Specification
2SA656
MIN TYP. MAX UNIT
-130 V
-130 V
-5 V
-2.0 V
-2.5 V
-0.1 mA
-0.1 mA
30 300
150 pF
5 MHz
2

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Inchange Semiconductor
Silicon PNP Power Transistors
PACKAGE OUTLINE
Product Specification
2SA656
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3