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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA653
DESCRIPTION
·With TO-66 package
·High voltage: VCEO=-120V(min)
APPLICATIONS
·Low frequency power amplifier color TV
vertical deflection output applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-150
-120
-6
-1.0
15
150
-55~150
UNIT
V
V
V
A
W

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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0
V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0
VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA
VBEsat Base-emitter saturation voltage
IC=-0.5A; IB=-50mA
ICBO Collector cut-off current
VCB=-150V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE DC current gain
IC=-0.2A ; VCE=-5V
fT Transition frequency
IC=-0.1A ; VCE=-10V
Product Specification
2SA653
MIN TYP. MAX UNIT
-120 V
-150 V
-1.5 V
-2.0 V
-10 μA
-10 μA
40
15 MHz
2

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Inchange Semiconductor
Silicon PNP Power Transistors
PACKAGE OUTLINE
Product Specification
2SA653
Fig.2 outline dimensions
3