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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA636 2SA636A
DESCRIPTION
·With TO-202 package
·Complement to type 2SC1098/1098A
·High breakdown voltage
·High transition frequency
APPLICATIONS
·For audio frequency power amplifier and
low speed switching applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1 Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-202) and symbol
Absolute maximum ratings (Ta=25)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
2SA636
2SA636A
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
ICM Collector current-peak
IBB Base current
PT Total power dissipation
TC=25
Ta=25
Tj Junction temperature
Tstg Storage temperature
VALUE
-70
-45
-60
-5
-3
-5
-0.6
10
1.2
150
-55~150
UNIT
V
V
V
A
A
A
W

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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A
VBEsat Base-emitter saturation voltage
IC=-1.5A ;IB=-0.15A
ICBO Collector cut-off current
VCB=-45V; IE=0
IEBO Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
VEB=-3V; IC=0
IC=-20mA ; VCE=-5V
IC=-0.5A ; VCE=-5V
COB Output capacitance
IE=0; VCB=-10V;f=1MHz
fT Transition frequency
IC=-0.1A ; VCB=-5V
‹ hFE-2 classifications
NM L
K
40-60 50-100 80-160 120-250
Product Specification
2SA636 2SA636A
MIN TYP. MAX UNIT
-0.5 -2.0
V
-0.8 -2.0
V
-1 μA
-1 μA
20
40 250
60 pF
45 MHz
2

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Inchange Semiconductor
Silicon PNP Power Transistors
PACKAGE OUTLINE
Product Specification
2SA636 2SA636A
Fig.2 outline dimensions
3