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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA634
DESCRIPTION
·With TO-202 package
·Complement to type 2SC1096
·High current capability
APPLICATIONS
·Audio frequency power amplifier
·Low speed switching
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IBB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
Fig.1 simplified outline (TO-202) and symbol
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
-40
-30
-5
-3.0
-6.0
-0.6
1.2
10
150
-55~150
UNIT
V
V
V
A
A
A
W

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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=-3.0A ;IB=-0.3 A
VBEsat Base-emitter saturation voltage
IC=-3.0A ;IB=-0.3 A
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
hFE-1
DC current gain
IC=-20mA ; VCE=-5V
hFE-2
DC current gain
IC=-1A ; VCE=-5V
ICBO Collector cut-off current
VCB=-30V; IE=0
IEBO Emitter cut-off current
VEB=-3V; IC=0
COB Output capacitance
IE=0; VCB=-10V;f=1MHz
fT Transition frequency
IC=-0.1A ; VCE=-5V
‹ hFE-2 Classifications
NM L
K
40-60 50-100 80-160 120-250
Product Specification
2SA634
MIN TYP. MAX UNIT
-2.0 V
-2.0 V
-30 V
20
40 250
-1.0 μA
-1.0 μA
75 pF
55 MHz
2

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Inchange Semiconductor
Silicon PNP Power Transistors
PACKAGE OUTLINE
Product Specification
2SA634
Fig.2 outline dimensions
3