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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA627
DESCRIPTION
·With TO-3 package
·Wide area of safe operation
·Large current capability
APPLICATIONS
·Power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
PC Collector power dissipation TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
-100
-100
-5
-7
60
150
-55~150
UNIT
V
V
V
A
W

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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=B 0
V(BR)CBO Collector-base breakdown voltage
IC=-1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCE(sat) Collector-emitter saturation voltage IC=-5A; IB=-0.5A
VBE(sat) Base-emitter saturation voltage
IC=-5A; IB=-0.5A
ICBO Collector cut-off current
VCB=-100V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE DC current gain
IC=-2A ; VCE=-5V
fT Transition frequency
IC=-0.5A ; VCE=-10V
Product Specification
2SA627
MIN TYP. MAX UNIT
-100
V
-100
V
-5 V
-2.0 V
-2.5 V
-0.1 mA
-0.1 mA
30 120
15 MHz
2

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Inchange Semiconductor
Silicon PNP Power Transistors
PACKAGE OUTLINE
Product Specification
2SA627
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3