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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA489
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Short switching time
APPLICATIONS
·Various inductance lamp drivers
for electrical equipment
·Inverters;converters
·Power amplification
·Switching regulator ,driver
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-70
-60
-5
-4
30
150
-55~150
UNIT
V
V
V
A
W

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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ,IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A
VBEsat Base-emitter saturation voltage
IC=-3A; IB=-0.3A
ICBO Collector cut-off current
VCB=-70V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE DC current gain
IC=-0.5A ; VCE=-5V
fT Transition frequency
IC=-0.5A ; VCE=-5V
‹ hFE Classifications
RO
Y
40-80 70-140 120-240
Product Specification
2SA489
MIN TYP. MAX UNIT
-60 V
-70 V
-5 V
-1.0 V
-1.5 V
-10 μA
-10 μA
40 240
3 MHz
2

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Inchange Semiconductor
Silicon PNP Power Transistors
PACKAGE OUTLINE
Product Specification
2SA489
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3