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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA473
DESCRIPTION
·With TO-220 package
·Complement to type 2SC1173
·Collector current :IC=-3A
·Collector dissipation:PC=10W@TC=25
APPLICATIONS
·Low frequency power amplifier
·Power regulator
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings (Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-30
-30
-5
-3
10
150
-55~150
UNIT
V
V
V
A
W

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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-0.5mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A
VBE Base-emitter voltage
IC=-0.5A ; VCE=-2V
ICBO Collector cut-off current
VCB=-20V;IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.5A ; VCE=-2V
hFE-2
DC current gain
IC=-2.5A ; VCE=-2V
COB Output capacitance
fT Transition frequency
IE=0; VCB=-10V;f=1MHz
IC=-0.5A ; VCE=-2V
‹ hFE-1 classifications
OY
70-140
120-240
Product Specification
2SA473
MIN TYP. MAX UNIT
-30 V
-30 V
-5 V
-0.8 V
-1.0 V
-1.0 μA
-1.0 μA
70 240
25
40 pF
100 MHz
2

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Inchange Semiconductor
Silicon PNP Power Transistors
PACKAGE OUTLINE
Product Specification
2SA473
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3

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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA473
4