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APTGT400SK120G
Buck chopper
Fast Trench + Field Stop IGBT®
Power Module
VCES = 1200V
IC = 400A @ Tc = 80°C
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G1
E1
VBUS
Q1
OUT
CR2
0/ VBUS
G1 VBUS
E1
0/VBUS
OUT
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1200
560 *
400
800
±20
1785
800A @ 1100V
Unit
V
A
V
W
* Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature
greater than 100°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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APTGT400SK120G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 1200V
750 µA
VGE =15V
IC = 400A
Tj = 25°C 1.4 1.7 2.1
Tj = 125°C
2.0
V
VGE = VCE , IC = 4 mA
VGE = 20V, VCE = 0V
5.0 5.8 6.5 V
800 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Tr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn on Energy
Eoff Turn off Energy
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
28
1.6 nF
1.2
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 400A
RG = 1.2
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 400A
RG = 1.2
VGE = ±15V
VBus = 600V
IC = 400A
RG = 1.2
Tj = 125°C
Tj = 125°C
260
30
420
80
290
50
520
100
40
40
ns
ns
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
VF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
VR=1200V
IF = 400A
VGE = 0V
1200
V
Tj = 25°C
Tj = 125°C
700
900
µA
Tc = 80°C
400
A
Tj = 25°C
Tj = 125°C
1.6 2.1
1.6
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Er Reverse Recovery Energy
IF = 400A
VR = 600V
di/dt =4000A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
170
280
36
72
20
36
ns
µC
mJ
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APTGT400SK120G
Thermal and package characteristics
Symbol Characteristic
RthJC Junction to Case Thermal Resistance
IGBT
Diode
VISOL
TJ
TST G
TC
Torque
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heatsink
For terminals
M6
M5
Wt Package Weight
SP6 Package outline (dimensions in mm)
Min Typ Max Unit
0.07
0.13
°C/W
2500
V
-40 150
-40 125 °C
-40 100
3
2
5
3.5
N.m
280 g
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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APTGT400SK120G
Typical Performance Curve
800
700
600
500
400
300
200
100
0
0
Output Characteristics (VGE=15V)
TJ=2 5°C
TJ=125°C
12
VCE (V)
3
4
800
700
600
500
400
300
200
100
0
5
Transfert Characteristics
TJ =25°C
TJ=125°C
TJ=125°C
6 7 8 9 10 11 12
VGE (V)
Switching Energy Losses vs Gate Resistance
100
90
80
70
60
50
VCE = 600V
VGE =15V
IC = 400A
TJ = 125°C
Eon
Eoff
40 Er
30
20
10
0
0 2 4 6 8 10
Gate Resistance (ohms)
800
700
600
500
400
300
200
100
0
0
Output Characteristics
TJ = 125°C
VGE=17V
VGE=13V
VGE=15V
VGE=9V
123
VCE (V)
4
Energy losses vs Collector Current
100
VCE = 600V
80 VGE = 15V
RG = 1.2
60 TJ = 125°C
Eon
Eoff
Er
40 Eon
20
0
0 100 200 300 400 500 600 700 800
IC (A)
Reverse Bias Safe Operating Area
900
800
700
600
500
400
300 VGE=15V
200 TJ=125°C
100 RG=1.2
0
0 300 600 900 1200 1500
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.08
0.06
0.9
0.7
IGBT
0.04 0.5
0.3
0.02 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
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APTGT400SK120G
Operating Frequency vs Collector Current
60
50
ZVS
40
ZCS
30
VCE=600V
D=50%
RG=1.2
TJ= 125°C
Tc=75°C
20
10 Hard
switching
0
0 100 200 300 400 500
IC (A)
800
700
600
500
400
300
200
100
0
0
Forward Characteristic of diode
TJ=25°C
TJ=125°C
TJ= 125°C
0.4 0.8 1.2 1.6 2 2.4
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.14
0.12 0.9
Diode
0.1 0.7
0.08 0.5
0.06
0.3
0.04
0.02
0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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