APTGT450DA60G
Operating Frequency vs Collector Current
120
VCE=300V
100
ZVS
80 ZCS
D=50%
RG=1Ω
TJ=150°C
Tc=85°C
60
40
20
Hard
switching
0
0 200
400
IC (A)
600
800
Forward Characteristic of diode
1000
800
600
400
200
0
0
TJ=125°C
TJ=150°C
0.4 0.8 1.2
VF (V)
TJ=25°C
1.6 2
0.16
0.14
0.12
0.1
0.08
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Diode
0.9
0.7
0.5
0.06 0.3
0.04
0.02
0
0.1
0.05
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
Rectangular Pulse Duration in Seconds
1
10
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