APTGT450DA60G.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 APTGT450DA60G 데이타시트 다운로드

No Preview Available !

APTGT450DA60G
Boost chopper
Trench + Field Stop IGBT®
Power Module
www.DataSheet4U.net
VBUS
CR1
OUT
Q2
G2
E2
0/VBUS
VBUS
E2
G2
0/VBUS
OUT
VCES = 600V
IC = 450A @ Tc = 80°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 150°C
Max ratings
600
550
450
600
±20
1750
900A @ 550V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5

No Preview Available !

APTGT450DA60G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V, VCE = 600V
500 µA
VGE =15V
IC = 450A
Tj = 25°C
Tj = 150°C
1.4 1.8
1.5
V
VGE = VCE , IC = 2mA
5.0 5.8 6.5 V
VGE = 20V, VCE = 0V
600 nA
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Td(on)
Tr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf Fall Time
Eon Turn on Energy
Eoff Turn off Energy
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
37
2.3 nF
1.1
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 450A
RG = 1Ω
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 450A
RG = 1Ω
VGE = ±15V
VBus = 300V
IC = 450A
RG = 1Ω
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
130
55
250
60
145
60
320
80
2.25
4.2
12.8
15.7
ns
ns
mJ
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
VF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Er Reverse Recovery Energy
600
VR=600V
Tj = 25°C
Tj = 150°C
Tc = 80°C
200
500
450
IF = 450A
VGE = 0V
Tj = 25°C
Tj = 150°C
1.5 1.9
1.4
Tj = 25°C
120
IF = 450A
VR = 300V
di/dt =4000A/µs
Tj = 150°C
Tj = 25°C
Tj = 150°C
210
20.3
42.8
Tj = 25°C
5.2
Tj = 150°C
10.6
V
µA
A
V
ns
µC
mJ
www.microsemi.com
2-5

No Preview Available !

APTGT450DA60G
Thermal and package characteristics
Symbol Characteristic
RthJC Junction to Case Thermal Resistance
IGBT
Diode
VISOL
TJ
TST G
TC
Torque
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heatsink
For terminals
M6
M5
Wt Package Weight
Min Typ Max Unit
0.085
0.14
°C/W
2500
V
-40 175
-40 125 °C
-40 100
3
2
5
3.5
N.m
280 g
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
www.microsemi.com
3-5

No Preview Available !

APTGT450DA60G
Typical Performance Curve
1000
800
600
Output Characteristics (VGE=15V)
TJ=25°C
TJ=125°C
TJ= 150°C
400
1000
800
600
400
Output Characteristics
TJ = 150°C
VGE= 19V
VGE=13V
VGE=15V
VGE=9V
200
TJ=25°C
0
0 0.5 1 1.5 2 2.5
VCE (V)
200
0
0 0.5 1 1.5 2 2.5 3 3.5
VCE (V)
1000
800
Transfert Characteristics
TJ=25°C
600
400
200
0
5
TJ=125°C
TJ=150°C
TJ=25°C
6 7 8 9 10 11
VGE (V)
Switching Energy Losses vs Gate Resistance
30
VCE = 300V
VGE =15V
IC = 450A
20 TJ = 150°C
Eoff
Eon
Energy losses vs Collector Current
35
VCE = 300V
30 VGE = 15V
25
RG = 1Ω
TJ = 150°C
Eoff
20 Er
15
10
5 Eon
0
0 200 400 600 800 1000
IC (A)
Reverse Bias Safe Operating Area
1000
800
600
10
0
0
Er
Eon
246
Gate Resistance (ohms)
8
400
200
VGE=15V
TJ=150°C
RG=1Ω
0
0 100 200 300 400 500 600 700
VCE (V)
0.1
0.08
0.06
0.04
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
IGBT
0.9
0.7
0.5
0.3
0.02 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
Rectangular Pulse Duration in Seconds
1
10
www.microsemi.com
4-5

No Preview Available !

APTGT450DA60G
Operating Frequency vs Collector Current
120
VCE=300V
100
ZVS
80 ZCS
D=50%
RG=1Ω
TJ=150°C
Tc=85°C
60
40
20
Hard
switching
0
0 200
400
IC (A)
600
800
Forward Characteristic of diode
1000
800
600
400
200
0
0
TJ=125°C
TJ=150°C
0.4 0.8 1.2
VF (V)
TJ=25°C
1.6 2
0.16
0.14
0.12
0.1
0.08
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Diode
0.9
0.7
0.5
0.06 0.3
0.04
0.02
0
0.1
0.05
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
Rectangular Pulse Duration in Seconds
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
5-5