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2SA673, 2SA673A
Silicon PNP Epitaxial
Application
Low frequency amplifier
Complementary pair with 2SC1213 and 2SC1213A
Outline
TO-92 (1)
3
2
1
1. Emitter
2. Collector
3. Base

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2SA673, 2SA673A
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
2SA673
–35
–35
–4
–500
400
150
–55 to +150
2SA673A
–50
–50
–4
–500
400
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
2SA673
2SA673A
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
–35 —
–50 —
—V
IC = –10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
–35 —
–50 —
—V
IC = –1 mA, RBE =
Emitter to base
breakdown voltage
V(BR)EBO
–4
–4
—V
IE = –10 µA, IC = 0
Collector cutoff current ICBO
Collector to emitter
saturation voltage
VCE(sat)
DC current trnsfer ratio hFE*1
— — –0.5 —
— –0.2 –0.6 —
60 — 320 60
— –0.5 µA
–0.2 –0.6 V
— 320
DC current trnsfer ratio hFE
10 — — 10 — —
Base to emitter voltage VBE
— –0.64 — — –0.64 — V
Notes: 1. The 2SA673 and 2SA673A are grouped by hFE as follows.
2. Pulse test
B CD
VCB = –20 V, IE = 0
IC = –150 mA,
IB = –15 mA*2
VCE = –3 V,
IC = –10 mA
VCE = –3 V,
IC = –500 mA*2
VCE = –3 V,
IC =–10 mA
60 to 120 100 to 200 160 to 320
2

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Maximum Collector Dissipation Curve
600
400
200
0 50 100 150
Ambient Temperature Ta (°C)
–500
Typical Output Characteristics (2)
–400
–300
–7
–6
–5
–4
–3
–200
–2
–100
0
–1 mA
PC = 400 mW
IB = 0
–2 –4 –6 –8 –10
Collector to Emitter Voltage VCE (V)
2SA673, 2SA673A
–100
–80
–60
–40
–20
0
Typical Output Characteristics (1)
–1.0 –0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1 mA
IB = 0
–2 –4 –6 –8 –10
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
–30
VCE = –3 V
–10
–3
–1.0
–0.3
0 –0.2 –0.4 –0.6 –0.8 –1.0
Base to Emitter Voltage VBE (V)
3

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2SA673, 2SA673A
DC Current Transfer Ratio vs.
Collector Current
150
VCE = –3 V
75
100 50
25
0
50 Ta = –25°C
0
–2 –5 –10 –20 –50 –100 –200 –500
Collector Current IC (mA)
Gain Bandwidth Product vs.
Collector Current
240
200 VCE = –3 V
160
120
80
40
0
–5 –10 –20 –50 –100 –200 –500
Collector Current IC (mA)
4

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4.8 ± 0.3
3.8 ± 0.3
Unit: mm
0.60 Max
0.5 ± 0.1
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g