2SA684.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 2SA684 데이타시트 다운로드

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Transistor
2SA683, 2SA684
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SC1383 and 2SC1384
s Features
q Complementary pair with 2SC1383 and 2SC1384.
q Allowing supply with the radial taping.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to 2SA683
base voltage 2SA684
Collector to 2SA683
emitter voltage 2SA684
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–30
–60
–25
–50
–5
–1.5
–1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
2.54±0.15
0.45+–00..21
1.27
1.27
123
0.45+–00..21
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base
2SA683
voltage
2SA684
Collector to emitter 2SA683
voltage
2SA684
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
VCBO
VCEO
VEBO
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –500mA
VCE = –5V, IC = –1A
IC = –500mA, IB = –50mA
IC = –500mA, IB = –50mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min typ max Unit
– 0.1 µA
–30
V
–60
–25
V
–50
–5 V
85 340
50
– 0.2 – 0.4
V
– 0.85 –1.2
V
200 MHz
20 30 pF
*hFE1 Rank classification
Rank
Q
R
hFE1 85 ~ 170 120 ~ 240
S
170 ~ 340
1

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Transistor
PC — Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=75˚C
25˚C
–25˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
fT — IE
200 VCB=–10V
180 Ta=25˚C
160
140
120
100
80
60
40
20
0
1 3 10 30 100
Emitter current IE (mA)
–1.5
–1.25
–1
– 0.75
– 0.5
– 0.25
IC — VCE
Ta=25˚C
IB=–10mA
–9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
0
0 –2 –4 –6 –8 –10
Collector to emitter voltage VCE (V)
2SA683, 2SA684
IC — IB
–1.2
–1.0
VCE=–10V
Ta=25˚C
– 0.8
– 0.6
– 0.4
– 0.2
0
0 –2 –4 –6 –8 –10 –12
Base current IB (mA)
–100
–30
–10
VBE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=–25˚C
75˚C
25˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
Cob — VCB
50
IE=0
45 f=1MHz
Ta=25˚C
40
35
30
25
20
15
10
5
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–600
–500
hFE — IC
VCE=–10V
–400
Ta=75˚C
–300
–200
25˚C
–25˚C
–100
0
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
–120
–100
VCER — RBE
IC=–10mA
Ta=25˚C
–80
–60
2SA684
–40
2SA683
–20
0
0.1 0.3 1 3 10 30 100
Base to emitter resistance RBE (k)
2

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Transistor
ICEO — Ta
104
VCE=–10V
103
102
10
1
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
Area of safe operation (ASO)
–10
–3
ICP
–1
IC
Single pulse
Ta=25˚C
t=10ms
– 0.3
– 0.1
t=1s
– 0.03
– 0.01
– 0.003
– 0.001
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector to emitter voltage VCE (V)
2SA683, 2SA684
3