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UNISONIC TECHNOLOGIES CO., LTD
2SA684
PNP SILICON TRANSISTOR
PNP SILICON TRANSISTOR
DESCRIPTION
The UTC 2SA684 is power amplifier and driver.
FEATURES
* Automatic insertion by radial taping possible.
* Complementary pair with 2SC1384.
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
-
2SA684G-x-AB3-R
SOT-89
2SA684L-x-T9N-B
2SA684G-x-T9N-B
TO-92NL
2SA684L-x-T9N-K
2SA684G-x-T9N-K
TO-92NL
Note: Pin Assignment: B: Base C: Collector E: Emitter
Pin Assignment
123
BCE
ECB
ECB
Packing
Tape Reel
Tape Box
Bulk
MARKING
SOT-89
TO-92NL
L: Lead Free
G: Halogen Free
Data Code
UTC
2SA684
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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2SA684
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
VCBO -60 V
VCEO -50 V
Emitter-Base Voltage
Peak Collector Current
VEBO -5 V
ICP -1.5 A
Collector Current (DC)
Collector Dissipation
SOT-89
TO-92NL
IC
PC
-1
500
1000
A
mW
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
hFE1
hFE2
VCE(SAT)
VBE(SAT)
fT
Cob
TEST CONDITIONS
IC=-10A, IE=0
IC=-2mA, IB=0
IE=-10μA, IC =0
VCB=-20V, IE=0
VCE=-10V, IC=-500mA
VCE=-5V, IC=-1A
IC=-0.5A, IB=-50mA
IC=-0.5A, IB=-50mA
VCE=-10V, IB=50mA, f=200MHz
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-60 V
-50 V
-5 V
-0.1 μA
85 340
50
-0.2 -0.4 V
-0.85 -1.2 V
200 MHz
20 30 pF
CLASSIFICATION OF hFE
RANK
RANGE
Q
85-170
R
120-240
S
170-340
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SA684
TYPICAL CHARACTERISTICS
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SA684
TYPICAL CHARACTERISTICS(Cont.)
PNP SILICON TRANSISTOR
-120
-100
Collector to Emitter Voltage vs.
Base to Emitter Resistance
IC=-10mA
TA=25°C
-80
-60
-40
-20
00.1 0.3 1 3 10 30 100
Base to Emitter Resistance, RBE (KΩ)
Area Of Safe Operation (ASO)
-10 Single Pulse
-3 ICP
TA=25°C
-1 t=10ms
-0.3
t=1s
-0.1
-0.03
-0.01
-0.003
-0.001-0.1 -0.3 -1 -3 -10 -30 -100
Collector To Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector to Emitter Current vs.
104 Ambient Temperature
VCE=-10V
103
102
10
10 20 40 60 80 100 120 140 160
Ambient Temperature, TA (°C)
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2SA684
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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