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UNISONIC TECHNOLOGIES CO., LTD
2SA733
PNP SILICON TRANSISTOR
LOW FREQUENCY AMPLIFIER
PNP EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
The UTC 2SA733 is a low frequency amplifier.
FEATURES
* Collector-emitter voltage:
BVCEO=-50V
* Collector current up to -150mA
* High hFE linearity
* Complimentary to 2SC945
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
- 2SA733G-x-AE3-R
- 2SA733G-x-AL3-R
2SA733L-x-T92-B
2SA733G-x-T92-B
2SA733L-x-T92-K
2SA733G-x-T92-K
2SA733L-x-T9S-B
2SA733G-x-T9S-B
2SA733L-x-T9S-K
2SA733G-x-T9S-K
Note: Pin Assignment: E: Emitter
C: Collector
Package
SOT-23
SOT-323
TO-92
TO-92
TO-92SP
TO-92SP
B: Base
Pin Assignment
123
EBC
EBC
ECB
ECB
ECB
ECB
Packing
Tape Reel
Tape Reel
Tape Box
Bulk
Tape Box
Bulk
MARKING
SOT-23 / SOT-323
TO-92
TO-92SP
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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2SA733
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
-50
-5
V
V
SOT-23
300
Collector Dissipation
SOT-323
TO-92
PC
200
750
mW
TO-92SP
550
Collector Current
Junction Temperature
IC
-150
mA
TJ 125 °C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
SYMBOL
BVCBO
BVCEO
VCE(SAT)
ICBO
IEBO
hFE
fT
Cob
NF
TEST CONDITIONS
IC=-100A, IE=0
IC=-10mA, IB=0
IC=-100mA, IB=-10mA
VCB=-40V, IE=0
VEB=-3V, IC=0
VCE=-6V, IC=-1mA
VCE=-10V, IC=-50mA
VCB=-10V, IE=0, f=1MHz
IC=-0.1mA, VCE=-6V
RG=10k, f=100Hz
MIN TYP MAX UNIT
-60 V
-50 V
-0.1 -0.3 V
-100 nA
-100 nA
90 600
100 190
MHz
2.0 3.0 pF
4.0 6.0 dB
CLASSIFICATION OF hFE
RANK
RANGE
R
90-180
Q
135-270
P
200-400
K
300-600
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SA733
TYPICAL CHARACTERISTICS
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SA733
TYPICAL CHARACTERISTICS (Cont.)
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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