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2SA743, 2SA743A
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A
Outline
TO-126 MOD
123
1. Emitter
2. Collector
3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
PC
PC * 1
Tj
Tstg
Ratings
2SA743
–50
–50
–4
–1
0.75
8
150
–55 to +150
2SA743A
–80
–80
–4
–1
0.75
8
150
–55 to +150
Unit
V
V
V
A
W
°C
°C

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2SA743, 2SA743A
Electrical Characteristics (Ta = 25°C)
2SA743
2SA743A
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
–50 —
–80 —
—V
IC = –1 mA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
–50 —
–80 —
—V
IC = –10 mA, RBE =
Emitter to base
breakdown voltage
V(BR)EBO
–4
–4
—V
IE = –1 mA, IC = 0
Collector cutoff current ICER
— — –20 — — — µA VCE = –50 V, RBE = 1
k
I CER
DC current tarnsfer ratio hFE*1
— — — — — –20
60 120 200 60 120 200
VCE = –80 V, RBE = 1
k
VCE = –4 V, IC = –50
mA
hFE 20 — — 20 — —
VCE = –4 V, IC = –1 A
(pulse)
Base to emitter voltage VBE
— –0.65 –1.0 — –0.65 1.0 V
VCE = –4 V, IC = –50
mA
Collector to emitter
saturation voltage
VCE(sat) — –0.75 –1.5 — –0.75 –1.5 V
IC = –1 A, IB = –0.1 A
Gain bandwidth product fT
— 120 — — 120 — MHz VCE = –4 V, IC = –30
mA
Note: 1. The 2SA743 and 2SA743A is grouped by hFE as follows.
B
60 to 120
C
100 to 200
2

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Maximum Collector Dissipation Curve
0.8
0.75 W
0.6
0.4
0.2
0 50 100 150 200
Ambient temperature Ta (°C)
–200
–160
Typical Output Charactristics (1)
–1.6 –1.4
–1.2
–1.0
TC = 25°C
–120
–0.8
–0.6
–80 –0.4
–40 –0.2 mA
IB = 0
0 –10 –20 –30 –40 –50
Collector to emitter voltage VCE (V)
2SA743, 2SA743A
Maximum Collector Dissipation Curve
8
6
4
2
0 50 100 150 200
Case temperature TC (°C)
Typical Output Characteristics (2)
1.0
0.8
–28 ––2240–––111602
TC = 25°C
–8
0.6 –6
–4
0.4
–2 mA
0.2
IB = 0
0 –1 –2 –3 –4 –5
Collector to emitter voltage VCE (V)
3

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2SA743, 2SA743A
–1.0
–0.5
Typical Transfer Characteristics
VCE = –4 V
Pulse
–0.2
–0.1
–0.05
–0.02
–0.01
0
–0.2 –0.4 –0.6 –0.8 –1.0 –1.2
Base to emitter voltage VBE (V)
DC Currnet Transfer Ratio vs.
Collector Current
180
TC = 75°C
VCE = –4 V
Pulse
160
140
25
120
100
–25
80
60
–0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0
Collector current IC (A)
4

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8.0 ± 0.5
φ
3.1
+0.15
–0.1
2.7 ± 0.4
120°
1.1
Unit: mm
0.8
2.29 ± 0.5
2.29 ± 0.5 0.55 1.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-126 Mod
0.67 g