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TrenchStop® Series
IKP10N60T
p
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5µs
Designed for :
- Variable Speed Drive for washing machines, air
conditioners and induction cooking
- Uninterrupted Power Supply
TrenchStop® and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
G
PG-TO-220-3-1
C
E
Type
VCE
IC VCE(sat),Tj=25°C Tj,max
IKP10N60T 600V 10A
1.5V
175°C
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area VCE 600V, Tj 175°C
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature,
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Marking Code
K10T60
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Package
PG-TO-220-3-1
Value
600
20
10
30
30
20
10
30
±20
5
110
-40...+175
-55...+175
260
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
www.DPataoSwheeet4rUS.neetmiconductors
1
Rev. 2.2 May 06

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Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
TrenchStop® Series
IKP10N60T
p
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
1.35
1.9
62
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
VGE=0V, IC=0.2mA
VGE = 15V, IC=10A
Tj=25°C
Tj=175°C
VGE=0V, IF=10A
Tj=25°C
Tj=175°C
IC=0.3mA,VCE=VGE
VCE=600V,
VGE=0V
Tj=25°C
Tj=175°C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=10A
min.
600
-
-
-
-
4.1
-
-
-
-
Value
typ.
-
1.5
1.8
1.6
1.6
4.6
-
-
-
6
none
Unit
max.
-V
2.05
-
2.0
-
5.7
µA
40
1000
100
-
nA
S
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V,
IC=Fehler!
Verweisquelle
konnte nicht
gefunden
werden.A
VGE=15V
- 551 - pF
- 40 -
- 17 -
- 62 - nC
Power Semiconductors
2
Rev. 2.2 May 06

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TrenchStop® Series
IKP10N60T
p
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
LE
IC(SC)
VGE=15V,tSC5µs
VCC = 400V,
Tj = 25°C
-
-
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=25°C,
VCC=400V,IC=10A,
VGE=0/15V,
RG=23,
CL σσ22))==6400npHF,
Energy losses include
“tail” and diode
reverse recovery.
Tj=25°C,
VR=400V, IF=10A,
diF/dt=880A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
7
100
Value
typ.
12
8
215
38
0.16
0.27
0.43
115
0.38
10
680
- nH
-A
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/µs
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=175°C,
VCC=400V,IC=10A,
VGE=0/15V,
RG= 23
CL σσ11))==6400npHF,
Energy losses include
“tail” and diode
reverse recovery.
Tj=175°C
VR=400V, IF=10A,
diF/dt=880A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
10
11
233
63
0.26
0.35
0.61
200
0.92
13
390
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/µs
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2)
1)
Leakage
Leakage
inductance L σ
inductance L σ
and
and
Stray capacity C σ due to
Stray capacity C σ due to
dynamic
dynamic
test
test
circuit
circuit
in Figure E.
in Figure E.
Power Semiconductors
3
Rev. 2.2 May 06