2SB1181.pdf 데이터시트 (총 8 페이지) - 파일 다운로드 2SB1181 데이타시트 다운로드

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2SB1260 / 2SB1181
PNP -1.0A -80V Middle Power Transistor
Parameter
VCEO
IC
Value
-80V
-1.0A
lOutline
MPT3
Base
Collector
Emitter
lFeatures
1) Suitable for Middle Power Driver
2) Complementary NPN Types : 2SD1898 / 2SD1733
3) Low VCE(sat)
VCE(sat)= -0.4V Max. (IC/IB= -500mA/ -50mA)
4) Lead Free/RoHS Compliant.
2SB1260
(SC-62)
<SOT-89>
Datasheet
CPT3
Collector
Base
Emitter
2SB1181
(SC-63)
<SOT-428>
lInner circuit
Collector
Base
Emitter
lApplications
Motor driver , LED driver
Power supply
lPackaging specifications
Part No.
Package
2SB1260
2SB1181
MPT3
CPT3
Package
size
(mm)
4540
6595
Taping
code
T100
TL
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit (pcs)
180 12 1,000
330 16 2,500
Marking
BE
B1181
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© 2013 ROHM Co., Ltd. All rights reserved.
1/7
2013.07 - Rev.H

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2SB1260 / 2SB1181
Data Sheet
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
Power dissipation
2SB1260
2SB1181
Junction temperature
Range of storage temperature
*1 Pw=20ms , duty=1/2
*2 Each terminal mounted on a reference land
*3 Mounted on a ceramic board (40×40×0.7 mm)
*4 Mounted on a substrate
*5 TC=25°C
Symbol
VCBO
VCEO
VEBO
IC
ICP *1
PD
Tj
Tstg
Values
-80
-80
-5
-1.0
-2.0
0.5 *2
2.0 *3
1 *4
10 *5
150
-55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Collector-emitter
breakdown voltage
BVCEO
Collector-base
breakdown voltage
BVCBO
Emitter-base
breakdown voltage
BVEBO
Conditions
IC = -1mA
IC = -50mA
IE = -50mA
Collector cut-off current
ICBO VCB = -60V
Min. Typ. Max. Unit
-80 - - V
-80 - - V
-5 - - V
- - -1 mA
Emitter cut-off current
Collector-emitter
saturation voltage
DC current gain
Transition frequency
Output capacitance
*6 2SB1260
*7 2SB1181
IEBO VEB = -4V
VCE(sat) IC = -1A, IB = -50mA
hFE VCE = -3V, IC = -0.1A
fT
VCE = -10V, IE = 50mA
f=100MHZ
Cob
VCB = -10V, IE = 0A
f = 1MHz
-
-
120
-
-
-
-
-
-
100
20 *6
25 *7
-1
-0.4
390
-
-
-
mA
V
-
MHz
pF
pF
lhFE rank categories
Rank
Q
hFE 120 to 270
R
180 to 390
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© 2013 ROHM Co., Ltd. All rights reserved.
2/7
2013.07 - Rev.H

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2SB1260 / 2SB1181
lElectrical characteristic curves(Ta = 25°C)
Data Sheet
Fig.1 Ground Emitter Propagation Characteristics
-1000
-100
VCE= -5V
Pulsed
-10
Ta=85ºC
25ºC
-40ºC
-1
Fig.2 Typical Output Characteristics
-0.1
-0 -0.5 -1 -1.5
BASE TO EMITTER VOLTAGE : VBE [V]
COLECTOR TO EMITTE VOLTAGE : VCE [V]
Fig.3 DC Current Gain vs. Collector Current(I) Fig.4 DC Current Gain vs. Collector Current(II)
1000
VCE= -3V
1000
Ta=25ºC
100
Ta=85ºC
25ºC
-40ºC
100
VCE= -3V
-1V
10
-1
-10
-100
-1000 -10000
COLLECTOR CURRENT : IC [mA]
10
-1
-10
-100
-1000 -10000
COLLECTOR CURRENT : IC [mA]
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2013.07 - Rev.H

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2SB1260 / 2SB1181
lElectrical characteristic curves(Ta = 25°C)
Fig.5 Collector-Emitter Saturation Voltage
vs. Collector Current (I)
-1
IC / IB = 10
Data Sheet
Fig.6 Collector-Emitter Saturation Voltage
vs. Collector Current (II)
-1
Ta=25ºC
-0.1 Ta=85ºC
25ºC
-40ºC
-0.1
IC / IB =20/1
10/1
-0.01
-1
-10
-100
-1000 -10000
COLLECTOR CURRENT : IC [mA]
-0.01
-1
-10
-100
-1000 -10000
COLLECTOR CURRENT : IC [mA]
Fig.7 Base-Emitter Saturation Voltage
vs. Collector Current
-10
IC / IB = 10
Ta= -40ºC
25ºC
-1 85ºC
Fig.8 Gain Bandwidth Product
vs. Emitter Current
-0.1
-1
-10
-100
-1000 -10000
COLLECTOR CURRENT : IC [mA]
EMITTER CURRENT :IE [mA]
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2013.07 - Rev.H

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2SB1260 / 2SB1181
lElectrical characteristic curves(Ta = 25°C)
Data Sheet
Fig.9 Collector output capacitance vs.
Collector-Base Voltage
COLLECTOR - BASE VOLTAGE : VCB [V]
Fig.10 Safe Operating Area
-10
2SB1260
1ms
-1
10ms
-0.1
-0.01
DC
(Mounted on a
reference land)
100ms
Ta=25ºC
Single non repetitive pulse
-0.001
-0.1 -1 -10
-100
COLLECTOR TO EMITTER VOLTAGE : VCE [V]
Fig.11 Safe Operating Area
-10
2SB1181
-1
100ms
10ms
-0.1 DC
-0.01
Ta=25ºC
Single non repetitive pulse
-0.001
-0.1 -1 -10
-100
COLLECTOR TO EMITTER VOLTAGE : VCE [V]
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© 2013 ROHM Co., Ltd. All rights reserved.
5/7
2013.07 - Rev.H