2SB1221.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 2SB1221 데이타시트 다운로드

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Transistor
2SB1221
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC3941
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Allowing supply with the radial taping.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–250
–200
–5
–100
–70
1
150
–55 ~ +150
Unit
V
V
V
mA
mA
W
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
1.27
+0.15
0.45 –0.1
+0.15
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
TO–92NL Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
ICBO
VCEO
VEBO
hFE*
VCB = –12V, IE = 0
IC = –100µA, IB = 0
IE = –1µA, IC = 0
VCE = –10V, IC = –5mA
–200
–5
60
–2 µA
V
V
220
Collector to emitter saturation voltage VCE(sat)
IC = –50mA, IB = –5mA
–1.5 V
Transition frequency
Collector output capacitance
fT
Cob
VCB = –10V, IE = 10mA, f = 200MHz
50
80
MHz
VCB = –10V, IE = 0, f = 1MHz
5 10 pF
*hFE Rank classification
Rank
Q
hFE 60 ~ 150
R
100 ~ 220
1

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Transistor
PC — Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IB — VBE
–2.4
–2.0
VCE=–10V
Ta=25˚C
–1.6
–1.2
– 0.8
– 0.4
0
0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 –1.2
Base to emitter voltage VBE (V)
hFE — IC
300
VCE=–10V
250
200
Ta=75˚C
150
25˚C
100 –25˚C
50
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
2SB1221
–120
–100
–80
–60
–40
–20
IC — VCE
Ta=25˚C
IB=–2mA
–1.8mA
–1.6mA
–1.4mA
–1.2mA
–1.0mA
– 0.8mA
– 0.6mA
– 0.4mA
– 0.2mA
0
0 –2 –4 –6 –8 –10
Collector to emitter voltage VCE (V)
–120
–100
IC — IB
VCE=–10V
Ta=25˚C
–80
–60
–40
–20
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0 –2.4
Base current IB (mA)
–120
–100
–80
IC — VBE
25˚C
Ta=75˚C
–25˚C
VCE=–10V
–60
–40
–20
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Base to emitter voltage VBE (V)
fT — IE
160
VCB=–10V
Ta=25˚C
140
120
100
80
60
40
20
0
0.1 0.3 1 3 10 30 100
Emitter current IE (mA)
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C Ta=75˚C
–25˚C
– 0.03
– 0.01
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
Cob — VCB
16
IE=0
14 f=1MHz
Ta=25˚C
12
10
8
6
4
2
0
–1 –3
–10 –30 –100
Collector to base voltage VCB (V)
2

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Transistor
10000
3000
1000
IEBO — Ta
VEB=–5V
300
100
30
10
3
1
0 40 80 120 160 200
Ambient temperature Ta (˚C)
10000
3000
1000
ICBO — Ta
VCB=–250V
300
100
30
10
3
1
0 40 80 120 160 200
Ambient temperature Ta (˚C)
2SB1221
Area of safe operation (ASO)
–1000
–300
–100
–30
ICP
IC
Single pulse
Ta=25˚C
t=10ms
t=1s
–10
–3
–1
– 0.3
– 0.1
–1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V)
3