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Power Transistor (-60V, -3A)
2SB1184 / 2SB1243
Features
1) Low VCE(sat).
VCE(sat) = -0.5V (Typ.)
(IC/IB = -2A / -0.2A)
2) Complements the 2SD1760 / 2SD1864.
Dimensions (Unit : mm)
2SB1184
6.5±0.2
5.1
+0.2
0.1
C0.5
2.3
+0.2
0.1
0.5±0.1
2SB1243
6.8±0.2
2.5±0.2
Structure
Epitaxial planar type
PNP silicon transistor
0.75
0.9
0.65±0.1
2.3±0.2 2.3±0.2
0.55±0.1
1.0±0.2
(1) (2) (3)
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
ROHM : ATV
1.05
0.45±0.1
(1) Emitter
(2) Collector
(3) Base
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
Collector power 2SB1184
dissipation
2SB1243
IC
PC
3 A (DC)
1W
15 W (TC=25°C)
1 W 1
Junction temperature
Tj
150 °C
Storage temperature
Tstg 55 to 150
1 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
°C
Electrical characteristics (Ta=25C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current transfer ratio
hFE
Transition frequency
Output capacitance
Measured using pulse current.
fT
Cob
Min.
60
50
5
120
Typ.
70
50
Max.
1
1
1
390
Unit
V
V
V
μA
μA
V
MHz
pF
Conditions
IC= −50μA
IC= −1mA
IE= −50μA
VCB= −40V
VEB= −4V
IC/IB= −2A/ 0.2A
VCE= −3V, IC= −0.5A
VCE= −5V, IE=0.5A, f=30MHz
VCB= −10V, IE=0A, f=1MHz
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c 2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.02 - Rev.C

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2SB1184 / 2SB1243
Packaging specifications and hFE
Package
Type
2SB1184
2SB1243
Code
hFE Basic ordering unit (pieces)
QR
QR
hFE values are classified as follows :
Item
Q
R
hFE 120 to 270 180 to 390
Taping
TL TV2
2500
2500
Electrical characteristic curves
10
VCE= −3V
5
2
1
Ta=100°C
0.5 25°C
-25°C
0.2
0.1
0.05
0.02
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter
propagation characteristics
3.0
2.5
2.0
50mA
45mA
40mA
35mA
30mA
25mA
Tc=25°C
20mA
15mA
1.5
10mA
1.0
5mA
0.5
IB=0mA
00 1 2 3 4 5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( )
1000
500
Ta=25°C
200
VCE=5V
100
50
3V
20
10
5
2
1
0.010.02 0.05 0.10.2 0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs.
collector current ( )
10
5
Ta= −25°C
2 25°C
100°C
1
0.5
lC/lB=10
VBE(sat)
0.2 Ta=100°C
0.1 25°C
25°C
0.05
VCE(sat)
0.02
0.01
0.01 0.02 0.05 0.1 0.2
0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
Fig.7 Collector-emitter saturation voltage
vs. collector current
Base-emitter saturation voltage vs.
collector current
1k
500 Ta=100°C
25°C
200 25°C
100
50
VCE= −3V
20
10
5
2
1
0.010.02 0.050.10.2 0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
Fig.5 DC current gain vs.
collector current ( )
1000
500
Ta=25°C
VCE= −5V
200
100
50
20
10
5
2
1
12
5 10 20 50 100 200 5001000
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
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2/3
Data Sheet
3.0
50mA
45mA
2.5 40mA
35mA
30mA
2.0
25mA
20mA
15mA
1.5
10mA
1.0
Tc=25°C
0.5
0
0
IB=−5mA
PC=15W
IB=0mA
10 20 30 40 50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics ( )
10
Ta=25°C
5
2
1
0.5
0.2
0.1
0.05
IC/IB=50/1
20/1
0.02
10/1
0.01
0.010.02 0.050.10.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation
voltage vs.collector current
1000
500
200
100
50
Ta=25°C
f=1MHz
IE=0A
20
10
5
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.9 Collector output capacitance vs.
collector base voltage
2010.02 - Rev.C

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2SB1184 / 2SB1243
-10.0
DCC
50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.10 Safe operation area
(2SB1184)
10.0
IC Max. (Pulse)
5.0
2.0
1.0
0.5
Ta=25°C
Single
nonrepetitive
pulse
0.2
0.1
0.05
0.02
0.01
0.10.2 0.5 1 2 5 10 20 50100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.11 Safe operation area
(2SB1243)
Data Sheet
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c 2010 ROHM Co., Ltd. All rights reserved.
3/3
2010.02 - Rev.C

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R1010A