2SB1252.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 2SB1252 데이타시트 다운로드

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Power Transistors
2SB1252
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD1892
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
s Features
q Optimum for 35W HiFi output
q High foward current transfer ratio hFE: 5000 to 30000
q Low collector to emitter saturation voltage VCE(sat): < 2.5V
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
Parameter
Symbol
Ratings
Unit
2.54±0.25
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
–120
–100
–5
–8
–5
45
2
150
–55 to +150
s Electrical Characteristics (TC=25˚C)
V
V
V
A
A
W
˚C
˚C
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
B
E
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = –120V, IE = 0
VCE = –100V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –5V, IC = –1A
VCE = –5V, IC = –4A
IC = –4A, IB = –4mA
IC = –4A, IB = –4mA
VCE = –10V, IC = – 0.5A, f = 1MHz
IC = –4A, IB1 = –4mA, IB2 = 4mA,
VCC = –50V
min
–100
2000
5000
typ max Unit
–100 µA
–100 µA
–100 µA
V
30000
–2.5 V
–3.0 V
20 MHz
1.0 µs
0.8 µs
1.0 µs
*hFE2 Rank classification
Rank
Q
P
hFE2 5000 to 15000 8000 to 30000
1

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Power Transistors
PC — Ta
60
(1) TC=Ta
(2) With a 100 × 100 × 2mm
50 Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(1) (4) Without heat sink
40 (PC=2W)
30
20
(2) (4)
10
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
–6
TC=25˚C
–5
IB=– 0.5mA
–4 – 0.4mA
– 0.3mA
–3
– 0.2mA
–2
– 0.1mA
–1
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SB1252
–100
–30
–10
VCE(sat) — IC
IC/IB=1000
–3
–1
– 0.3
TC=100˚C
–25˚C
25˚C
– 0.1
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (A)
–100
–30
–10
VBE(sat) — IC
IC/IB=1000
–3
TC=–25˚C
–1
100˚C
25˚C
– 0.3
– 0.1
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (A)
100000
30000
10000
3000
1000
hFE — IC
TC=100˚C
VCE=5V
25˚C
–25˚C
300
100
30
10
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
1000
300
100
Cob — VCB
IE=0
f=1MHz
TC=25˚C
30
10
3
1
–1 –3
–10 –30 –100
Collector to base voltage VCB (V)
100
30
10
3 ton
tf
1 tstg
ton, tstg, tf — IC
Pulsed tw=1ms
Duty cycle=1%
IC/IB=1000
(–IB1=IB2)
VCC=–50V
TC=25˚C
0.3
0.1
0.03
0.01
0
–2 –4 –6 –8
Collector current IC (A)
Area of safe operation (ASO)
–100
–30
Non repetitive pulse
TC=25˚C
–10 ICP
–3 IC
10ms
t=1ms
–1 DC
– 0.3
– 0.1
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V)
2

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Power Transistors
10000
1000
Rth(t) — t
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.2A (2W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
100 (1)
(2)
10
1
0.1
10–4
10–3
10–2
10–1
1
10
Time t (s)
102 103
104
2SB1252
3