BTS7904S.pdf 데이터시트 (총 13 페이지) - 파일 다운로드 BTS7904S 데이타시트 다운로드

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OptiMOS® -T PN Half Bridge
Features
• Dual p- and n-channel MOSFET
• Automotive AEC Q101 qualified
• Green package (RoHS compliant)
• Ultra low R DS(on)
• 150 °C operating temperature
Product Summary
V DS
R DS(on),max
ID
BTS7904S
PN
-30 55 V
13 12 m
-40 40 A
PG-TO220-5-13
Type
BTS7904S
Package
PG-TO220-5-13
Marking
7904S
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current1)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation2)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I D T C=25 °C
T C=100 °C
I D,pulse T C=25 °C
E AS I D=±20 A
IAS
V GS
P tot T C=25 °C
T j, T stg
Value
PN
-40 40
Unit
A
-40 40
-160
160
350 200 mJ
-40 40 A
-16 / +5 +16 / -163) V
96 69 W
-55 ... 150
°C
55/150/56
1.0
page 1
2008-07-08
Datasheet pdf - http://www.DataSheet4U.net/

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Parameter
Symbol Conditions
BTS7904S
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction -
case
SMD version, device on PCB5)
P R thJC
N
R thJA
minimal footprint
6 cm2 cooling area4)
-
-
-
-
- 1.3 K/W
- 1.8
- 62
- 45
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
P V (BR)DSS V GS=0 V, I D=-1 mA
N V GS=0 V, I D=1 mA
P V GS(th) V DS=V GS, I D=-70 µA
N V DS=V GS, I D=40 µA
P I DSS
V DS=-18 V, V GS=0 V,
T j=25 °C
V DS=-18 V, V GS=0 V,
T j=125 °C
N
V DS=18 V, V GS=0 V,
T j=25 °C
Gate-source leakage current
Drain-source on-state
resistance
V DS=18 V, V GS=0 V,
T j=125 °C
P I GSS
N
P R DS(on)
N
V GS=-16 V, V DS=0 V
V GS=16 V, V DS=0 V
V GS=-10 V, I D=-20 A
V GS=10 V, I D=20 A
P
V GS=-4.5 V,
I D=-12.5 A
N V GS=4.5 V, I D=20 A
-30
55
-1
1.2
-
-
-
-
-
-
-
-
-
-
- -V
--
-1.5 -2.1
1.7 2.2
-0.01
-1 µA
-1 -100
0.01 1
1 100
-10 -100 nA
1 100
7.2 13 m
9.7 12
17.5 21
16.8 20.5
1.0
page 2
2008-07-08
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Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Switching charge
Gate plateau voltage
Gate to source charge
Gate to drain charge
Gate charge
Gate plateau voltage
Symbol Conditions
BTS7904S
min.
Values
typ.
Unit
max.
P C iss
N
P C oss
N
P Crss
N
P t d(on)
N
P tr
N
P t d(off)
N
P tf
N
V GS=0 V, V DS=±25 V,
f =1 MHz
V DD=15 V, V GS=10 V
N: I D=30 A, R G=2
P: I D=-30 A, R G=2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3900
4600
1000
570
850
550
22
15
94
77
104
31
150
8
5200 pF
6100
1300
760
1300
820
- ns
-
-
-
-
-
-
-
P Q gs
Q gd
Qg
V plateau
N Q gs
Q gd
Qg
V plateau
V DD=-24 V, I D=-40 A,
V GS=0 to - 10 V
V DD=44 V, I D=40 A,
V GS=0 to 10 V
-
-
-
-
-
-
-
-12 -16 nC
-30 -45
-80 -121
-3.0 -
20 27
32 48
82 123
4.2
1.0
page 3
2008-07-08
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Parameter
Reverse Diode
Diode continuous forward
current2)
Diode pulse current
Diode forward voltage
Reverse recovery time2)
Reverse recovery charge2)
Symbol Conditions
BTS7904S
min.
Values
typ.
Unit
max.
P IS
N
P I S,pulse
N
T C=25 °C
P V SD
V GS=0 V, I F=-40 A,
T j=25 °C
N
P t rr
N
P Q rr
N
V GS=0 V, I F=40 A,
T j=25 °C
V R=15 V, I F=I S,
di F/dt =400 A/µs
- - -40 A
40
- - -160
160
- -1.00 -1.2 V
- 0.90 1.2
- 41 - ns
- 47 -
- -40 - nC
- 50 -
1.0
page 4
2008-07-08
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1 Power dissipation (P)
P tot=f(T C), V GS6 V
100
2 Power dissipation (N)
P tot=f(T C), V GS6 V
80
BTS7904S
80
60
60
40
40
20
20
0
0 20 40 60 80 100 120 140 160
T C [°C]
0
0 20 40 60 80 100 120 140 160
T C [°C]
3 Drain current (P)
I D=f(T C)
parameter: V GS6 V
45
4 Drain current (N)
I D=f(T C)
parameter: V GS6 V
45
40 40
35 35
30 30
25 25
20 20
15 15
10 10
55
0
0 20 40 60 80 100 120 140 160
T C [°C]
0
0 20 40 60 80 100 120 140 160
T C [°C]
1.0
page 5
2008-07-08
Datasheet pdf - http://www.DataSheet4U.net/