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2SJ527(L),2SJ527(S)
Silicon P Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 0.3 typ.
Low drive current
4 V gete drive devices
High speed switching
Outline
DPAK-1
D
G
S
ADE-208-640A (Z)
2nd. Edition
Jun 1998
44
12 3
12 3
1. Gate
2. Drain
3. Source
4. Drain
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2SJ527(L),2SJ527(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalenche current
Avalenche energy
Channel dissipation
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
I Note3
AP
E Note3
AR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW 10µs, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Electrical Characteristics (Ta = 25°C)
Ratings
–60
±20
–5
–20
–5
–5
2.1
20
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltege drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Note: 4. Pulse test
Symbol Min
V(BR)DSS
V(BR)GSS
I DSS
I GSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
–60
±20
–1.0
1.8
Coss —
Crss —
t d(on)
tr
t d(off)
tf
VDF
t rr
Typ Max
——
——
— –10
±10
— –2.0
0.3 0.4
0.5 0.8
3—
220 —
110 —
35 —
10 —
30 —
45 —
35 —
–1.35 —
55 —
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = –10mA, VGS = 0
IG = ±100µA, VDS = 0
VDS = –60 V, VGS = 0
VGS = ±16V, VDS = 0
ID = –1mA, VDS = –10V
ID = –3A, VGS = –10V Note4
ID = –3A, VGS = –4V Note4
ID = –3A, VDS = –10V Note4
VDS = –10V
VGS = 0
f = 1MHz
VGS = –10V, ID = –3A
RL = 10
IF = –5A, VGS = 0
IF = –5A, VGS = 0
diF/ dt = 50A/µs
2
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Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0 50 100 150 200
Case Temperature Tc (°C)
2SJ527(L),2SJ527(S)
–100
Maximum Safe Operation Area
–50
–20
–10
–5
–2
–1
–0.5
–0.2
–0.1
10 µs
PW 100 µs
OtlihmpisietearadretiboaynisRinDDCSO=(po1e(n0Tra)cmt=iso2n(51°sCh)ot)
Ta = 25 °C
–0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage V DS (V)
Typical Output Characteristics
–10 V
–5
–8 V
–5 V
–6 V
–4 V
–4 Pulse Test
–3 –3.5 V
–2
–3 V
–1
VGS = –2.5 V
0 –2 –4 –6 –8 –10
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
–5
V DS = –10 V
Pulse Test
–4
–3
–2
–1
Tc = 75°C
–25°C
25°C
0 –1 –2 –3 –4 –5
Gate to Source Voltage V GS (V)
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2SJ527(L),2SJ527(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–5
Pulse Test
–4
–3
–2
–1
–1 A
I D = –5 A
–2 A
0 –4 –8 –12 –16 –20
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
10
Pulse Test
3
1
–4 V
0.3
VGS = –10 V
0.1
–0.1
–0.3
–1 –3 –10
Drain Current I D (A)
–30
Static Drain to Source on State Resistance
vs. Temperature
2.0
Pulse Test
1.6
1.2
I D = –4 A
0.8
VGS = –4 V
0.4
–2 A
–5 A –1 A
–1, –2 A
0 –10 V
–40 0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
10
5 Tc = –25 °C
2
75 °C
1
25 °C
0.5
0.2 V DS = –10 V
Pulse Test
0.1
–0.1 –0.2 –0.5 –1 –2 –5 –10
Drain Current I D (A)
4
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Body–Drain Diode Reverse
Recovery Time
100
50
20
di / dt = 50 A / µs
VGS = 0, Ta = 25 °C
10
–0.1 –0.2 –0.5 –1 –2 –5 –10
Reverse Drain Current I DR (A)
2SJ527(L),2SJ527(S)
1000
500
200
100
50
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
20
10 Crss
5
2 VGS = 0
f = 1 MHz
1
0 –10 –20 –30 –40 –50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
00
V DD = –10 V
VDS
–25 V
–20 –50 V
–4
ID = –5 A
–40 –8
–60
–80
–100
0
VGS
V DD = –50 V
–25 V
–10 V
–12
–16
4 8 12 16
Gate Charge Qg (nc)
–20
20
Switching Characteristics
100
t d(off)
50
tf
20
t d(on)
10
5 tr
2
1
–0.1 –0.2
VGS = –10 V, VDD = 30 V
duty < 1 %
–0.5 –1 –2 –5 –10
Drain Current I D (A)
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